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1.
Opt Express ; 20(7): 7022-34, 2012 Mar 26.
Artigo em Inglês | MEDLINE | ID: mdl-22453382

RESUMO

A control algorithm is presented that addresses the stability issues inherent to the operation of monolithic mode-locked laser diodes. It enables a continuous pulse duration tuning without any onset of Q-switching instabilities. A demonstration of the algorithm performance is presented for two radically different laser diode geometries and continuous pulse duration tuning between 0.5 ps to 2.2 ps and 1.2 ps to 10.2 ps is achieved. With practical applications in mind, this algorithm also facilitates control over performance parameters such as output power and wavelength during pulse duration tuning. The developed algorithm enables the user to harness the operational flexibility from such a laser with 'push-button' simplicity.


Assuntos
Algoritmos , Desenho Assistido por Computador , Lasers Semicondutores , Modelos Teóricos , Simulação por Computador , Desenho de Equipamento , Análise de Falha de Equipamento , Luz , Espalhamento de Radiação
2.
Opt Express ; 20(7): 7035-9, 2012 Mar 26.
Artigo em Inglês | MEDLINE | ID: mdl-22453383

RESUMO

Dicke superradiance from a two-section violet GaN/InGaN semiconductor laser diode is demonstrated for the first time. In the superradiance regime, optical pulses with peak powers in excess of 2.8 W and durations as short as 1.4 ps are generated at repetition rates of up to 10 MHz at the emission wavelength of 408 nm. The properties of superradiant pulse generation from these GaN/InGaN laser diodes are very similar to those reported for infrared AlGaAs/GaAs laser diodes.


Assuntos
Gálio/química , Índio/química , Lasers Semicondutores , Processamento de Sinais Assistido por Computador/instrumentação , Desenho de Equipamento , Análise de Falha de Equipamento
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