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1.
Opt Express ; 31(2): 792-801, 2023 Jan 16.
Artigo em Inglês | MEDLINE | ID: mdl-36785128

RESUMO

Nonlinear silicon photonics offers unique abilities to generate, manipulate and detect optical signals in nano-devices, with applications based on field localization and large third order nonlinearity. However, at the nanoscale, inefficient nonlinear processes, absorption, and the lack of realistic models limit the nano-engineering of silicon. Here we report measurements of second and third harmonic generation from undoped silicon membranes. Using experimental results and simulations we identify the effective mass of valence electrons, which determines second harmonic generation efficiency, and oscillator parameters that control third order processes. We can then accurately predict the nonlinear optical properties of complex structures, without introducing and artificially separating the effective χ(2) into surface and volume contributions, and by simultaneously including effects of linear and nonlinear dispersions. Our results suggest that judicious exploitation of the nonlinear dispersion of ordinary semiconductors can provide reasonable nonlinear efficiencies and transformational device physics well into the UV range.

2.
Opt Express ; 29(6): 8581-8591, 2021 Mar 15.
Artigo em Inglês | MEDLINE | ID: mdl-33820302

RESUMO

Understanding how light interacts with matter at the nanoscale is pivotal if one is to properly engineer nano-antennas, filters and other devices whose geometrical features approach atomic size. We report experimental results on second and third harmonic generation from 20 nm- and 70 nm-thick gold layers, for TE- and TM-polarized incident light pulses. We discuss the relative roles that bound electrons and an intensity dependent free electron density (hot electrons) play in third harmonic generation. While planar structures are generally the simplest to fabricate, metal layers that are only a few nanometers thick and partially transparent are almost never studied. Yet, transmission offers an additional reference point to compare experimental measurements with theoretical models. Our experimental results are explained well within the context of the microscopic hydrodynamic model that we employ to simulate second and third harmonic conversion efficiencies. Using our experimental observations we estimate ∣χ1064nm(3)∣≈10-18 (m/V)2, triggered mostly by hot electrons.

3.
Opt Express ; 27(18): 26120-26130, 2019 Sep 02.
Artigo em Inglês | MEDLINE | ID: mdl-31510472

RESUMO

Phase-locked second and third harmonic generation in the opaque region of a GaAs wafer is experimentally observed and analyzed both in transmission and reflection. These harmonic components, which are generated close to the surface, can propagate through an opaque material as long as the pump is tuned to a region of transparency or semitransparency and correspond to the inhomogeneous solutions of Maxwell's equations with nonlinear polarization sources. We show that measurement of the angular and polarization dependence of the observed harmonic components allows one to infer the different nonlinear mechanisms that trigger these processes, including not only the bulk nonlinearity but also the surface and magnetic Lorentz contributions, which usually are either hidden by the bulk contributions or assumed to be negligible. The experimental results are compared with a detailed numerical model that takes into account these different effects, including for the first time combined linear and nonlinear material dispersions in a nonlinear Lorentz oscillator model of the bulk nonlinearities. Our results suggest that the intensity of the second harmonic signal generated by the surface can be more intense than the signal generated by the bulk. These findings have significant repercussions and are consequential in nanoscale systems, which are usually investigated using only dispersionless bulk nonlinearities, with near-complete disregard of surface and magnetic contributions and their microscopic origins.

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