A near-field scanning microwave microscope for characterization of inhomogeneous photovoltaics.

We present a near-field scanning microwave microscope (NSMM) that has been configured for imaging photovoltaic samples. Our system incorporates a Pt-Ir tip inserted into an open-ended coaxial cable to form a weakly coupled resonator, allowing the microwave reflection S(11) signal to be measured across a sample over a frequency range of 1 GHz - 5 GHz. A phase-tuning circuit increased impedance-measurement sensitivity by allowing for tuning of the S(11) minimum down to -78 dBm. A bias-T and preamplifier enabled simultaneous, non-contact measurement of the DC tip-sample current, and a tuning fork feedback system provided simultaneous topographic data. Light-free tuning fork feedback provided characterization of photovoltaic samples both in the dark and under illumination at 405 nm. NSMM measurements were obtained on an inhomogeneous, third-generation Cu(In,Ga)Se(2) (CIGS) sample. The S(11) and DC current features were found to spatially broaden around grain boundaries with the sample under illumination. The broadening is attributed to optically generated charge that becomes trapped and changes the local depletion of the grain boundaries, thereby modifying the local capacitance. Imaging provided by the NSMM offers a new RF methodology to resolve and characterize nanoscale electrical features in photovoltaic materials and devices.

Photoluminescence polarization in strained GaN/AlGaN core/shell nanowires.

The optical polarization properties of GaN/AlGaN core/shell nanowire (NW) heterostructures have been investigated using polarization resolved micro-photoluminescence (µ-PL) and interpreted in terms of a strain-dependent 6 × 6 k·p theoretical model. The NW heterostructures were fabricated in two steps: the Si-doped n-type c-axis GaN NW cores were grown by molecular beam epitaxy (MBE) and then epitaxially overgrown using halide vapor phase epitaxy (HVPE) to form Mg-doped AlGaN shells. The emission of the uncoated strain-free GaN NW core is found to be polarized perpendicular to the c-axis, while the GaN core compressively strained by the AlGaN shell exhibits a polarization parallel to the NW c-axis. The luminescence of the AlGaN shell is weakly polarized perpendicular to the c-axis due to the tensile axial strain in the shell.

A passively mode-locked fiber laser at 1.54 mum with a fundamental repetition frequency reaching 2 GHz.

We demonstrate a fundamentally mode-locked fiber laser with a repetition frequency in excess of 2 GHz at a central wavelength of 1.535 mum. Co-doped ytterbium-erbium fiber provides the gain medium for the laser, affording high gain per unit length, while a semiconductor saturable absorber mirror (SAM) provides the pulse shaping mechanism in a standing wave cavity. Results are shown confirming cw mode-locking for 1 GHz and 2 GHz repetition frequency systems. The response of the frequency comb output to pump power variations is shown to follow a single pole response. The timing jitter of a 540MHz repetition-rate laser has been suppressed to below 100 fs through phase-lead compensated feedback to the pump power. Alternatively, a single comb line of a 850MHz repetition-rate laser has been phase-locked to a narrow linewidth cw laser with an in-loop phase jitter of 0.06 rad(2). The laser design is compatible with low-noise oscillator applications.

Accurate Measurements of the Zero-Dispersion Wavelength in Optical Fibers.

We have developed a frequency-domain phase shift system for measuring the zero-dispersion wavelength and the dispersion slope of single-mode optical fibers. A differential phase shift method and nonlinear four-wave mixing technique were also investigated. The frequency-domain phase shift method is used to produce Standard Reference Materials that have their zero-dispersion wavelengths characterized with an expanded uncertainty (k = 2) of ± 0.060 nm.