Photo-Activated, Solid-State Introduction of Luminescent Oxygen Defects into Semiconducting Single-Walled Carbon Nanotubes.

Oxygen defects in semiconducting single-walled carbon nanotubes (SWCNTs) are localized disruptions in the carbon lattice caused by the formation of epoxy or ether groups, commonly through wet-chemical reactions. The associated modifications of the electronic structure can result in luminescent states with emission energies below those of pristine SWCNTs in the near-infrared range, which makes them promising candidates for applications in biosensing and as single-photon emitters. Here, we demonstrate the controlled introduction of luminescent oxygen defects into networks of monochiral (6,5) SWCNTs using a solid-state photocatalytic approach. UV irradiation of SWCNTs on the photoreactive surfaces of the transition metal oxides TiOx and ZnOx in the presence of trace amounts of water and oxygen results in the creation of reactive oxygen species that initiate radical reactions with the carbon lattice and the formation of oxygen defects. The created ether-d and epoxide-l defect configurations give rise to two distinct red-shifted emissive features. The chemical and dielectric properties of the photoactive oxides influence the final defect emission properties, with oxygen-functionalized SWCNTs on TiOx substrates being brighter than those on ZnOx or pristine SWCNTs on glass. The photoinduced functionalization of nanotubes is further employed to create lateral patterns of oxygen defects in (6,5) SWCNT networks with micrometer resolution and thus spatially controlled defect emission.

Impact of Dielectric Environment on Trion Emission from Single-Walled Carbon Nanotube Networks.

Trions are charged excitons that form upon optical or electrical excitation of low-dimensional semiconductors in the presence of charge carriers (holes or electrons). Trion emission from semiconducting single-walled carbon nanotubes (SWCNTs) occurs in the near-infrared and at lower energies compared to the respective exciton. It can be used as an indicator for the presence of excess charge carriers in SWCNT samples and devices. Both excitons and trions are highly sensitive to the surrounding dielectric medium of the nanotubes, having an impact on their application in optoelectronic devices. Here, the influence of different dielectric materials on exciton and trion emission from electrostatically doped networks of polymer-sorted (6,5) SWCNTs in top-gate field-effect transistors is investigated. The observed differences of trion and exciton emission energies and intensities for hole and electron accumulation cannot be explained with the polarizability or screening characteristics of the different dielectric materials, but they show a clear dependence on the charge trapping properties of the dielectrics. Charge localization (trapping of holes or electrons by the dielectric) reduces exciton quenching, emission blue-shift and trion formation. Based on the observed carrier type and dielectric material dependent variations, the ratio of trion to exciton emission and the exciton blue-shift are not suitable as quantitative metrics for doping levels of carbon nanotubes.

Guiding Charge Transport in Semiconducting Carbon Nanotube Networks by Local Optical Switching.

Photoswitchable, ambipolar field-effect transistors (FETs) are fabricated with dense networks of polymer-sorted, semiconducting single-walled carbon nanotubes (SWCNTs) in top-gate geometry with photochromic molecules mixed in the polymer matrix of the gate dielectric. Both hole and electron transport are strongly affected by the presence of spiropyran and its photoisomer merocyanine. A strong and persistent reduction of charge carrier mobilities and thus drain currents upon UV illumination (photoisomerization) and its recovery by annealing give these SWCNT transistors the basic properties of optical memory devices. Temperature-dependent mobility measurements and density functional theory calculations indicate scattering of charge carriers by the large dipoles of the merocyanine molecules and electron trapping by protonated merocyanine as the underlying mechanism. The direct dependence of carrier mobility on UV exposure is employed to pattern high- and low-resistance areas within the FET channel and thus to guide charge transport through the nanotube network along predefined paths with micrometer resolution. Near-infrared electroluminescence imaging enables the direct visualization of such patterned current pathways with good contrast. Elaborate mobility and thus current density patterns can be created by local optical switching, visualized and erased again by reverse isomerization through heating.

Electron-Hole Correlation as Unambiguous and Universal Classification for the Nature of Low-Lying ππ* States of Nitrogen Heterocycles.

The 1La and 1Lb classification of electronically excited states of cata-condensed hydrocarbons proposed by Platt in 1949 ( Platt , J. R. J. Chem. Phys. 1949 , 17 , 484 ) is challenged by investigating a series of N-heteronaphthalenes and comparison of their low-lying ππ* excited states to those of naphthalene. The breakdown of Platt's classification scheme for N-heterocycles is highlighted, and a reliable and versatile alternative using exciton analyses is presented. The strength of electron-hole correlation turns out to be the most reliable distinguishing feature, and thus, an alternative nomenclature of 1Lw (weakly correlated) and 1Ls (strongly correlated) is proposed. Furthermore, fundamental guidelines for their property modulation through N-atom substitution patterns are discussed.