Emission Enhancement of Ge/Si Quantum Dots in Hybrid Structures with Subwavelength Lattice of Al Nanodisks.

The effects of resonance interaction of plasmonic and photonic modes in hybrid metal-dielectric structures with square Al nanodisk lattices coupled with a Si waveguide layer were investigated using micro-photoluminescence (micro-PL) spectroscopy. As radiation sources, GeSi quantum dots were embedded in the waveguide. A set of narrow PL peaks superimposed on the broad bands were observed in the range of quantum dot emissions. At optimal parameters of Al nanodisks lattices, almost one order increasing of PL intensity was obtained. The experimental PL spectra are in good agreement with results of theoretical calculations. The realization of high-quality bound states in the continuum was confirmed by a comparative analysis of the experimental spectra and theoretical dispersion dependences. The results demonstrated the perspectives of these type structures for a flat band realization and supporting the slow light.

Fast Recombination of Charge-Transfer State in Organic Photovoltaic Composite of P3HT and Semiconducting Carbon Nanotubes Is the Reason for Its Poor Photovoltaic Performance.

Although the photovoltaic performance of the composite of poly-3-hexylthiophene (P3HT) with semiconducting single-walled carbon nanotubes (s-SWCNT) is promising, the short-circuit current density jSC is much lower than that for typical polymer/fullerene composites. Out-of-phase electron spin echo (ESE) technique with laser excitation of the P3HT/s-SWCNT composite was used to clarify the origin of the poor photogeneration of free charges. The appearance of out-of-phase ESE signal is a solid proof that the charge-transfer state of P3HT+/s-SWCNT- is formed upon photoexcitation and the electron spins of P3HT+ and s-SWCNT- are correlated. No out-of-phase ESE signal was detected in the same experiment with pristine P3HT film. The out-of-phase ESE envelope modulation trace for P3HT/s-SWCNT composite was close to that for the polymer/fullerene photovoltaic composite PCDTBT/PC70BM, which implies a similar distance of initial charge separation in the range 2-4 nm. However, out-of-phase ESE signal decay with delay after laser flash increase for P3HT/s-SWCNT composite was much faster, with a characteristic time of 10 µs at 30 K. This points to the higher geminate recombination rate for the P3HT/s-SWCNT composite, which may be one of the reasons for the relatively poor photovoltaic performance of this system.

Radiation-Stimulated Formation of Two-Dimensional Structures Based on Calcium Silicide.

The formation of CaSi2 polycrystalline structures under the postgrowth electron irradiation of epitaxial CaF2/Si(111) films with embedded thin Si layers was studied. The dependence on the electron exposure time was investigated for two types of structures with different film thicknesses. The optimal conditions for the formation of two-dimensional CaSi2 structures were found. Raman spectra of the structures after a 1 min electron irradiation demonstrated only one pronounced peak corresponding to the vibrations of Si atoms in the plane of the calcium-intercalated two-dimensional Si layer. An increase in the exposure time resulted in the transition from two- to three-dimensional CaSi2 structures having more complex Raman spectra with additional peaks typical of bulk CaSi2 crystals. Based on the results of microscopic studies and transport measurements, a model explaining the observed effects was proposed.

One-Stage Formation of Two-Dimensional Photonic Crystal and Spatially Ordered Arrays of Self-Assembled Ge(Si) Nanoislandson Pit-Patterned Silicon-On-Insulator Substrate.

A new approach to improve the light-emitting efficiency of Ge(Si) quantum dots (QDs) by the formation of an ordered array of QDs on a pit-patterned silicon-on-insulator (SOI) substrate is presented. This approach makes it possible to use the same pre-patterned substrate both for the growth of spatially ordered QDs and for the formation of photonic crystal (PhC) in which QDs are embedded. The periodic array of deep pits on the SOI substrate simultaneously serves as a template for spatially ordering of QDs and the basis for two-dimensional PhCs. As a result of theoretical and experimental studies, the main regularities of the QD nucleation on the pre-patterned surface with deep pits were revealed. The parameters of the pit-patterned substrate (the period of the location of the pits, the pit shape, and depth) providing a significant increase of the QD luminescence intensity due to the effective interaction of QD emission with the PhC modes are found.