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1.
Biosens Bioelectron ; 150: 111903, 2020 Feb 15.
Artigo em Inglês | MEDLINE | ID: mdl-31791875

RESUMO

In this work, we fabricate a novel bismuth vanadate/two dimensional-carbon nitride/deoxyribonucleic acid (BiVO4/2D-C3N4/DNA) aptamer photoelectrochemical (PEC) sensor, and this sensor provides a record detection sensitivity area (5 × 10-7 µg/L - 10 µg/L) for Microcystin-LR (MC-LR). Meanwhile, except for MC-LR detection, this sensor presents highly sensitivity for tumor marker, heavy metal ion, antibiotic also by changing the DNA aptamer. Photo charge dynamic and theory calculation results reveal that 2D-C3N4 is a key material for multifunctional interface reconciliation of this PEC aptamer sensor. Firstly, it can serve as photogenerated hole oriented-transfer medium from the BiVO4 photoanode to the detective target; In addition, 2D-C3N4 with large area of π electron cloud can fix the DNA aptamer parallelly by π-π bonding with the nucleic acid in the DNA aptamer to shorten the hole transfer distance from the semiconductor to target. So that, a record MC-LR detection sensitivity has been achieved by the 2D-C3N4 modified BiVO4/DNA aptamer sensor.

2.
Nanoscale Res Lett ; 9(1): 590, 2014.
Artigo em Inglês | MEDLINE | ID: mdl-25364317

RESUMO

In this study, titanium nitride (TiN) is synthesized using reactive sputtering for a self-aligned gate process. The Schottky barrier height of the TiN on n-GaN is around 0.5 to 0.6 eV and remains virtually constant with varying nitrogen ratios. As compared with the conventional Ni electrode, the TiN electrode presents a lower turn-on voltage, while its reverse leakage current is comparable with that of Ni. The results of annealing evaluation at different temperatures and duration times show that the TiN/W/Au gate stack can withstand the ohmic annealing process at 800°C for 1 or 3 min. Finally, the self-aligned TiN-gated AlGaN/GaN heterostructure field-effect transistors are obtained with good pinch-off characteristics.

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