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1.
Nanotechnology ; 31(14): 145708, 2020 Apr 03.
Artigo em Inglês | MEDLINE | ID: mdl-31846937

RESUMO

Axial p-n and p-i-n junctions in GaAs0.7P0.3 nanowires are demonstrated and analyzed using electron beam induced current microscopy. Organized self-catalyzed nanowire arrays are grown by molecular beam epitaxy on nanopatterned Si substrates. The nanowires are doped using Be and Si impurities to obtain p- and n-type conductivity, respectively. A method to determine the doping type by analyzing the induced current in the vicinity of a Schottky contact is proposed. It is demonstrated that for the applied growth conditions using Ga as a catalyst, Si doping induces an n-type conductivity contrary to the GaAs self-catalyzed nanowire case, where Si was reported to yield a p-type doping. Active axial nanowire p-n junctions having a homogeneous composition along the axis are synthesized and the carrier concentration and minority carrier diffusion lengths are measured. To the best of our knowledge, this is the first report of axial p-n junctions in self-catalyzed GaAsP nanowires.

2.
Nanotechnology ; 30(21): 214006, 2019 May 24.
Artigo em Inglês | MEDLINE | ID: mdl-30736025

RESUMO

In this work, nanoscale electrical and optical properties of n-GaN nanowires (NWs) containing GaN/AlN multiple quantum discs (MQDs) grown by molecular beam epitaxy are investigated by means of single wire I(V) measurements, electron beam induced current microscopy (EBIC) and cathodoluminescence (CL) analysis. A strong impact of non-intentional AlN and GaN shells on the electrical resistance of individual NWs is put in evidence. The EBIC mappings reveal the presence of two regions with internal electric fields oriented in opposite directions: one in the MQDs region and the other in the adjacent bottom GaN segment. These fields are found to co-exist under zero bias, while under an external bias either one or the other dominates the current collection. In this way EBIC maps allow us to locate the current generation within the wire under different bias conditions and to give the first direct evidence of carrier collection from AlN/GaN MQDs. The NWs have been further investigated by photoluminescence and CL analyses at low temperature. CL mappings show that the near band edge emission of GaN from the bottom part of the NW is blue-shifted due to the presence of the radial shell. In addition, it is observed that CL intensity drops in the central part of the NWs. Comparing the CL and EBIC maps, this decrease of the luminescence intensity is attributed to an efficient charge splitting effect due to the electric fields in the MQDs region and in the GaN base.

3.
Nanoscale ; 10(43): 20207-20217, 2018 Nov 08.
Artigo em Inglês | MEDLINE | ID: mdl-30357204

RESUMO

One obstacle for the development of nanowire (NW) solar cells is the challenge to assess and control their nanoscale electrical properties. In this work a top-cell made of p-n GaAs core/shell NWs grown on a Si(111) substrate by Molecular Beam Epitaxy (MBE) is investigated by high resolution charge collection microscopy. Electron Beam Induced Current (EBIC) analyses of single NWs have validated the formation of a homogeneous radial p-n junction over the entire length of the NWs. The radial geometry leads to an increase of the junction area by 38 times with respect to the NW footprint. The interface between the NWs and the Si(111) substrate does not show any electrical loss, which would have led to a decrease of the EBIC signal. Single NW I-V characteristics present a diodic behavior. A model of the radial junction single NW is proposed and the electrical parameters are estimated by numerical fitting of the I-Vs and of the EBIC map. Solar cells based on NW arrays were fabricated and analyzed by EBIC microscopy, which evidenced the presence of a Schottky barrier at the NW/ITO top contact. Improvement of the top contact quality is achieved by thermal annealing at 400 °C, which strongly reduces the parasitic Schottky barrier.

4.
Opt Express ; 21(8): 10324-34, 2013 Apr 22.
Artigo em Inglês | MEDLINE | ID: mdl-23609742

RESUMO

Collection of free carriers is a key issue in silicon photonics devices. We show that a lateral metal-semiconductor-metal Schottky junction is an efficient and simple way of dealing with that issue in a photonic crystal microcavity. Using a simple electrode design, and taking into account the optical mode profile, the resulting carrier distribution in the structure is calculated. We show that the corresponding effective free carrier lifetime can be reduced by 50 times when the bias is tuned. This allows one to maintain a high cavity quality factor under strong optical injection. In the fabricated structures, carrier depletion is correlated with transmission spectra and directly visualized by Electron Beam Induced Current pictures. These measurements demonstrate the validity of this carrier extraction principle. The design can still be optimized in order to obtain full carrier depletion at a smaller energy cost.


Assuntos
Semicondutores , Silício/química , Ressonância de Plasmônio de Superfície/instrumentação , Desenho de Equipamento , Análise de Falha de Equipamento , Miniaturização , Fótons
5.
Appl Opt ; 44(30): 6402-11, 2005 Oct 20.
Artigo em Inglês | MEDLINE | ID: mdl-16252652

RESUMO

The driving mechanism of a scanning mirror can cause significant impairment of expanded beam properties, which we investigated for several scanning waveforms. Engineering on the scanning waveform is then carried out by a scanned CO2 laser beam technique to enlarge the uniform heating region for stretching and sintering of silica fibers. Details of the derivation are given. A simple thermal model is presented to account for the relationship between the scanning beam profile and the taper shape. Fusion profiles are also compared for various scanning waveforms. The corresponding scanned beam power distributions are determined experimentally, which enables us to determine precise power density conditions for CO2 laser fusion.

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