Study on encapsulation of Lactobacillus plantarum 23-1 in W/O/W emulsion stabilized by pectin and zein particle complex.

This study was conducted to develop a W/O/W emulsion encapsulated Lactobacillus plantarum 23-1 (LP23-1) to significantly enhance the survival rate of LP23-1 under simulated digestion and storage conditions. The zein particles and pectin formed a complex through electrostatic interaction and hydrogen bonding. When the proportion of zein particles to pectin was 1:1, the emulsifying stability index (ESI) was 304.17 %. Additionally, when the proportion of the internal aqueous phase to the oil phase was 1:9, the polyglycerol polyricinoleate (PGPR) concentration was 5 %, the proportion of primary emulsion to the external aqueous phase was 5:5, the zein particles concentration was 4 %, and the proportion of zein particles to pectin was 1:1, the encapsulation rate was the highest at 96.27 %. Cryo-scanning electron microscopy and fluorescence microscopy confirmed the morphology of W/O/W emulsion and successful encapsulation of LP23-1. Furthermore, compared with free LP23-1, the W/O/W emulsion encapsulation significantly improved the survival rate of LP23-1 to 73.36 % after simulated gastrointestinal digestion and maintained a high survival rate of 78.42 % during the 35-day storage. The W/O/W emulsion was found to effectively improve the survival rate of LP23-1 during simulated digestion and storage, which has implications for the development of probiotic functional foods with elevated survival rates.

Anisotropic Spin Fluctuations Induced by Spin-Orbit Coupling in a Misfit Layer Compound (LaSe)1.14(NbSe2).

Spin-orbit coupling (SOC) has significant effects on the superconductivity and magnetism of transition metal dichalcogenides (TMDs) at the 2D limit. Although 2D TMD samples possess many exotic properties different from those of bulk samples, experimental characterization in this field is still limited, especially for magnetism. Recent studies have revealed that bulk misfit layer compounds (MLCs) with (LaSe)1.14(NbSe2)n = 1,2 exhibit an Ising superconductivity similar to that of heavily electron-doped NbSe2 monolayers. This offers an opportunity to study the effect of SOC on the magnetism of 2D TMDs. Here, the possible SOC effect in (LaSe)1.14(NbSe2) is investigated by measuring nuclear magnetic resonance (NMR) and electrical transport. It is found that the LaSe layer not only functions as a charge reservoir for transferring electrons into the NbSe2 layer but also remarkably influences the local electronic environment around the 93Nb nuclei. More importantly, the significant SOC induces both a weak antilocalization (WAL) effect and anisotropic spin fluctuations in noncentrosymmetric NbSe2 layers. The present work contributes to a deep understanding of the role of the SOC effect in 2D TMDs and supports MCLs as an intriguing platform for exploring exotic physical properties within the 2D limit.

Room-temperature spin-valve devices without spacer layers based on Fe3GaTe2 van der Waals homojunctions.

In the advancement of spintronic devices, spin valves play a critical role, especially in the sensor and information industries. The emergence of two-dimensional (2D) van der Waals (vdW) magnetic materials has opened up new possibilities for the development of high-performance spin-valve devices. However, the Curie temperature (TC) of most 2D vdW ferromagnets falls below room temperature, resulting in a scarcity of room-temperature spin-valve devices. In this study, we have prepared spin-valve devices without spacer layers based on Fe3GaTe2 vdW homojunctions and observed notable two-state magnetoresistance (MR) from 2 K to room temperature. A maximum MR of 50% surpasses some heterojunctions with spacer-layer structures and it remains 0.6% at room temperature. Furthermore, spin-valve devices exhibit favorable ohmic contact and low operating current as low as 10 nA. These findings demonstrate the enormous potential of Fe3GaTe2-based room-temperature devices and the simplified two-layer structure shows significant prospect in the context of the ongoing trend towards miniaturization of contemporary devices.

Room-Temperature Highly Efficient Nonvolatile Magnetization Switching by Current in van der Waals Fe3GaTe2 Devices.

The ability to manipulate magnetic states by a low electric current represents a fundamental desire in spintronics. In recent years, two-dimensional van der Waals (vdW) magnetic materials have attracted an extensive amount of attention due to their appreciable spin-orbit torque effect. However, for most known vdW ferromagnets, their relatively low Curie temperatures (TC) limit their applications. Consequently, low-power vdW spintronic devices that can operate at room temperature are in great demand. In this research, we fabricate nanodevices based on a solitary thin flake of vdW ferromagnet Fe3GaTe2, in which we successfully achieve nonvolatile and highly efficient magnetization switching by small currents at room temperature. Notably, the switching current density and the switching power dissipation are as low as 1.7 × 105 A/cm2 and 1.6 × 1013 W/m3, respectively, with an external magnetic field of 80 Oe; both are much reduced compared to those of conventional magnet/heavy metal heterostructure devices and other vdW devices.

Large oscillatory thermal hall effect in kagome metals.

The thermal Hall effect recently provided intriguing probes to the ground state of exotic quantum matters. These observations of transverse thermal Hall signals lead to the debate on the fermionic versus bosonic origins of these phenomena. The recent report of quantum oscillations (QOs) in Kitaev spin liquid points to a possible resolution. The Landau level quantization would most likely capture only the fermionic thermal transport effect. However, the QOs in the thermal Hall effect are generally hard to detect. In this work, we report the observation of a large oscillatory thermal Hall effect of correlated Kagome metals. We detect a 180-degree phase change of the oscillation and demonstrate the phase flip as an essential feature for QOs in the thermal transport properties. More importantly, the QOs in the thermal Hall channel are more profound than those in the electrical Hall channel, which strongly violates the Wiedemann-Franz (WF) law for QOs. This result presents the oscillatory thermal Hall effect as a powerful probe to the correlated quantum materials.

Electrical switching of Ising-superconducting nonreciprocity for quantum neuronal transistor.

Nonreciprocal quantum transport effect is mainly governed by the symmetry breaking of the material systems and is gaining extensive attention in condensed matter physics. Realizing electrical switching of the polarity of the nonreciprocal transport without external magnetic field is essential to the development of nonreciprocal quantum devices. However, electrical switching of superconducting nonreciprocity remains yet to be achieved. Here, we report the observation of field-free electrical switching of nonreciprocal Ising superconductivity in Fe3GeTe2/NbSe2 van der Waals (vdW) heterostructure. By taking advantage of this electrically switchable superconducting nonreciprocity, we demonstrate a proof-of-concept nonreciprocal quantum neuronal transistor, which allows for implementing the XOR logic gate and faithfully emulating biological functionality of a cortical neuron in the brain. Our work provides a promising pathway to realize field-free and electrically switchable nonreciprocity of quantum transport and demonstrate its potential in exploring neuromorphic quantum devices with both functionality and performance beyond the traditional devices.

Electrically Tunable, Rapid Spin-Orbit Torque Induced Modulation of Colossal Magnetoresistance in Mn3Si2Te6 Nanoflakes.

As a quasi-layered ferrimagnetic material, Mn3Si2Te6 nanoflakes exhibit magnetoresistance behavior that is fundamentally different from their bulk crystal counterparts. They offer three key properties crucial for spintronics. First, at least 106 times faster response compared to that exhibited by bulk crystals has been observed in current-controlled resistance and magnetoresistance. Second, ultralow current density is required for resistance modulation (∼5 A/cm2). Third, electrically gate-tunable magnetoresistance has been realized. Theoretical calculations reveal that the unique magnetoresistance behavior in the Mn3Si2Te6 nanoflakes arises from a magnetic field induced band gap shift across the Fermi level. The rapid current induced resistance variation is attributed to spin-orbit torque, an intrinsically ultrafast process (∼nanoseconds). This study suggests promising avenues for spintronic applications. In addition, it highlights Mn3Si2Te6 nanoflakes as a suitable platform for investigating the intriguing physics underlying chiral orbital moments, magnetic field induced band variation, and spin torque.

Layer-Number-Dependent Magnetism in the Co-Doped van der Waals Ferromagnet Fe3GaTe2.

Recently, van der Waals (vdW) antiferromagnets have been proposed to be crucial for spintronics due to their favorable properties compared to ferromagnets, including robustness against magnetic perturbation and high frequencies of spin dynamics. High-performance and energy-efficient spin functionalities often depend on the current-driven manipulation and detection of spin states, highlighting the significance of two-dimensional metallic antiferromagnets, which have not been much explored due to the lack of suitable materials. Here, we report a new metallic vdW antiferromagnet obtained from the ferromagnet Fe3GaTe2 by cobalt (Co) doping. Through the layer-number-dependent Hall resistance and magnetoresistance measurements, an evident odd-even layer-number effect has been observed in its few-layered flakes, suggesting that it could host an A-type antiferromagnetic structure. This peculiar layer-number-dependent magnetism in Co-doped Fe3GaTe2 helps unravel the complex magnetic structures in such doped vdW magnets, and our finding will enrich material candidates and spin functionalities for spintronic applications.

Relationship between trimethylamine N-oxide and the risk of hypertension in patients with cardiovascular disease: A meta-analysis and dose-response relationship analysis.

BACKGROUND: The gut microbiota-dependent metabolite trimethylamine N-oxide (TMAO) has recently been recognized to be one of the risk factors for cardiovascular disease (CVD). However, there is a scarcity of data on the relationship between circulating TMAO levels and hypertension in patients with CVD. Meta analysis and a dose-response relationship were used in this study to assess the relationship between circulating trimethylamine N-oxide levels and the risk of hypertension in patients with CVD. METHODS: CNKI, Wanfang Database, Pubmed, Embase, Cochrane Library, and Web of Science were searched up to June 01, 2023. Meta-analysis and dose-response analysis of relative risk data from prospective cohort studies reporting on the relationship between circulating TMAO levels and hypertension risk in patients with CVD were conducted. RESULTS: Fifteen studies with a total of 15,498 patients were included in the present meta-analysis. Compared with a lower circulating TMAO level, a higher TMAO level was associated with a higher risk of hypertension in patients with CVD (RR = 1.14,95%CI (1.08, 1.20)). And the higher the TMAO level, the greater the risk of hypertension. The dose-response analysis revealed a linear dose-response relationship between circulating TMAO levels and the risk of hypertension in patients with CVD. The risk of hypertension increased by 1.014% when the circulating TMAO level increased by 1 µ mol/L. CONCLUSION: In patients with CVD, the level of circulating TMAO is significantly related to the risk of hypertension. The risk of hypertension increased by 1.014% for every 1 µ mol/L increase in circulating TMAO levels.

Incidence and risk factors of in-hospital prosthesis-related complications following total shoulder arthroplasty.

BACKGROUND: The occurrence of prosthesis-related complications after total shoulder arthroplasty is devastating and costly. The purpose was to determine the incidence and risk of in-hospital prosthesis-related complications after total shoulder arthroplasty utilizing a large-scale sample database. METHODS: A retrospective database analysis was performed based on Nationwide Inpatient Sample from 2010 to 2014. Patients who underwent total shoulder arthroplasty were included. Patient demographics, hospital characteristics, length of stay, economic indicators, in-hospital mortality, comorbidities, and peri-operative complications were evaluated. RESULTS: A total of 34,198 cases were capture from the Nationwide Inpatient Sample database. There were 343 cases of in-hospital prosthesis-related complications after total shoulder arthroplasty and the overall incidence was 1%, with a more than 2.5-fold decrease from 2010 to 2014. Dislocation was the most common category among prosthesis-related complications (0.1%). The occurrence of in-hospital prosthesis-related complications was associated with significantly more total charges and slightly longer length of stay while less usage of Medicare. Risk factors of prosthesis-related complications were identified including younger age (<64 years), female, the native American, hospital in the South, alcohol abuse, depression, uncomplicated diabetes, diabetes with chronic complications, fluid and electrolyte disorders, metastatic cancer, neurological disorders, and renal failure. Interestingly, advanced age (≥65 years) and proprietary hospital were found as protective factors. Furthermore, prosthesis-related complications were associated with aseptic necrosis, rheumatoid arthritis, rotator cuff tear arthropathy, Parkinson's disease, prior shoulder arthroscopy, and blood transfusion. CONCLUSIONS: It is of benefit to study risk factors of prosthesis-related complications following total shoulder arthroplasty to ensure the appropriate management and optimize consequences although a relatively low incidence was identified.