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1.
Nanoscale Res Lett ; 10: 182, 2015.
Artigo em Inglês | MEDLINE | ID: mdl-25977655

RESUMO

In this study, novel thin-GaN-based ultraviolet light-emitting diodes (NTG-LEDs) were fabricated using wafer bonding, laser lift-off, dry etching, textured surface, and interconnection techniques. Placing PN electrodes on the same side minimized the absorption caused by electrodes in conventional vertical injection light-emitting diodes (V-LEDs) and the current spreading was improved. The light output power (700 mA) of the NTG-LEDs was enhanced by 18.3% compared with that of the V-LEDs, and the external quantum efficiency (EQE) of the NTG-LEDs was also relatively enhanced by 20.0% compared with that of a reference device. When the current operations were 1,500 mA, the enhancements of the light output power and EQE were 27.4% and 27.2%, respectively. Additionally, the efficiency droop was improved by more than 15% at the same current level.

2.
Nanoscale Res Lett ; 9(1): 2417, 2014 Dec.
Artigo em Inglês | MEDLINE | ID: mdl-26088992

RESUMO

For the purpose of light extraction and efficiency enhancement, the nitride-based ultraviolet vertical-injection light-emitting diodes (UV-VLEDs) with non-insulation current blocking layer (n-CBL) and optimized textured surface were fabricated. The optical and electrical characteristics were investigated in this n-CBL UV-VLED. Furthermore, the efficiency of optimized structure was improved by 5 ~ 6 times compared to our reference.

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