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1.
ACS Appl Mater Interfaces ; 5(2): 227-32, 2013 Jan 23.
Artigo em Inglês | MEDLINE | ID: mdl-23259506

RESUMO

Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes. The room-temperature electroluminescence exhibits a dominant ultraviolet peak at λ ≈ 370 nm from ZnO band-edge emission and suppressed luminescence from GaN, as a result of the decrease in electron concentration in ZnO and reduced electron injection from n-ZnO:N to p-GaN:Mg because of the nitrogen incorporation. The result indicates that the in situ atomic layer doping technique is an effective approach to tailoring the electrical properties of materials in device applications.

2.
ACS Appl Mater Interfaces ; 4(7): 3471-5, 2012 Jul 25.
Artigo em Inglês | MEDLINE | ID: mdl-22686330

RESUMO

Nitrogen-doped ZnO (ZnO:N) films were prepared by remote plasma in situ atomic layer doping. X-ray photoelectron and absorption near-edge spectroscopies reveal the presence of Zn-N bond and a decrease in strength of the O 2p hybridized with Zn 4s states, which are consistent with the decrease of electron concentration in ZnO:N films with increasing nitrogen content and indicate the formation of acceptor states by occupation of oxygen sites with nitrogen. Linear dependence between the nitrogen content and the atomic layer doping percentage indicates the electrical properties and local electronic structures can be precisely controlled using this atomic layer doping technique.

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