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Nanotechnology ; 30(49): 495702, 2019 Sep 02.
Artigo em Inglês | MEDLINE | ID: mdl-31476746


We present an atmospheric-pressure plasma (APP) treatment technique to improve the electrical performance of solution-processed dielectric films. This technique can successfully reduce leakage current and frequency dependence of solution-processed dielectric films. The APP treatment contributes to the conversion of metal hydroxide to metal oxide, and in the case of a solution-treated AlO x dielectric thin film, it effectively ascribes to the formation of high-quality AlO x dielectric thin films. The capacitance of the untreated AlO x dielectric thin film varies up to 9.9% with frequency change, but the capacitance of the APP treated AlO x dielectric thin film varies within 1.5%. When the solution-processed InO x thin-film transistors (TFTs) were fabricated using these dielectric films, the field-effect mobility of TFTs with the APP-treated AlO x dielectric film was increased significantly from 9.77 to 26.79 cm2 V-1 s-1 in comparison to that of TFTs with the untreated AlO x dielectric film. We also have confirmed that these results are similar to the properties of the sample prepared at high annealing temperature including electrical performance, conduction mechanism and chemical structure. The APP treatment technique provides a new opportunity to effectively improve the electrical performance of solution-processed dielectrics in the atmosphere at low temperature.

Sci Rep ; 9(1): 10323, 2019 Jul 16.
Artigo em Inglês | MEDLINE | ID: mdl-31312002


In a MIS (Metal/Insulator/Semiconductor) structure consisting of two terminals, a systematic analysis of the electrical charge transport mechanism through an insulator is essential for advanced electronic application devices such as next-generation memories based on resistance differences. Herein, we have verified the charge transfer phenomenon in MIOS (Metal/Insulator/Oxide Semiconductor) diodes through a defect engineering of the insulator. By selectively generating the oxygen vacancies in the insulator (Al2O3), the MIOS diode rectification of the P++-Si anode/Al2O3/IGZO cathode reached 107 at 1.8 V and considerably suppressed the leakage current. Studying the current-voltage characteristics of MIOS diodes shows that the charge carrier transport mechanism can vary depending on the defect density as well as the difference between the CBM (conduction band minimum) of the semiconductor and the oxygen vacancy energy level of the insulator.

Sci Rep ; 8(1): 5643, 2018 Apr 04.
Artigo em Inglês | MEDLINE | ID: mdl-29618743


The technology for electrical current passing through an insulator thin-film between two electrodes is newly getting spotlights for substantial potentials toward advanced functional devices including a diode and a resistive switching device. However, depending on an electrode-limited conduction mechanisms of the conventional devices, a narrow processing window for a thickness of the insulator thin-film and an inability to control a magnitude and direction of the currents are challenges to overcome. Herein, we report a new approach to enable electrical charge carriers to pass stably through a relatively-thick insulator layer and to control a magnitude and polarity of the currents by applying an oxide semiconductor electrode in a metal/insulator/metal structure. We reveal that the electrical conduction in our devices follows a space charge-limited conduction mechanism which mainly depends on the charge carriers injected from contacts. Therefore, characteristics of the current including a current value and a rectification ratio of input signal are precisely controlled by electrical properties of the oxide semiconductor electrode. The unique current characteristics in metal/insulator/oxide semiconductor structures give extendable inspirations in electronic materials science, even a prominent solution for various technology areas of electronics.

ACS Appl Mater Interfaces ; 9(1): 548-557, 2017 01 11.
Artigo em Inglês | MEDLINE | ID: mdl-27936583


Oxide semiconductors thin film transistors (OS TFTs) with good transparency and electrical performance have great potential for future display technology. In particular, solution-processed OS TFTs have been attracted much attention due to many advantages such as continuous, large scale, and low cost processability. Recently, OS TFTs fabricated with a metal aqua complex have been focused because they have low temperature processability for deposition on flexible substrate as well as high field-effect mobility for application of advanced display. However, despite some remarkable results, important factors to optimize their electrical performance with reproducibility and uniformity have not yet been achieved. Here, we newly introduce the strong effects of humidity to enhance the electrical performance of OS TFTs fabricated with the metal aqua complex. Through humidity control during the spin-coating process and annealing process, we successfully demonstrate solution-processed InOx/SiO2 TFTs with a good electrical uniformity of ∼5% standard deviation, showing high average field-effect mobility of 2.76 cm2V-1s-1 and 15.28 cm2V-1s-1 fabricated at 200 and 250 °C, respectively. Also, on the basis of the systematic analyses, we demonstrate the mechanism for the change in electrical properties of InOx TFTs depending on the humidity control. Finally, on the basis of the mechanism, we extended the humidity control to the fabrication of the AlOx insulator. Subsequently, we successfully achieved humidity-controlled InOx/AlOx TFTs fabricated at 200 °C showing high average field-effect mobility of 9.5 cm2V-1s-1.