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1.
Small ; : e1904271, 2020 Mar 20.
Artigo em Inglês | MEDLINE | ID: mdl-32196957

RESUMO

Recently, 2D transition metal dichalcogenides (TMDs) have become intriguing materials in the versatile field of photonics and optoelectronics because of their strong light-matter interaction that stems from the atomic layer thickness, broadband optical response, controllable optoelectronic properties, and high nonlinearity, as well as compatibility. Nevertheless, the low optical cross-section of 2D-TMDs inhibits the light-matter interaction, resulting in lower quantum yield. Therefore, hybridizing the 2D-TMDs with plasmonic nanomaterials has become one of the promising strategies to boost the optical absorption of thin 2D-TMDs. The appeal of plasmonics is based on their capability to localize and enhance the electromagnetic field and increase the optical path length of light by scattering and injecting hot electrons to TMDs. In this regard, recent achievements with respect to hybridization of the plasmonic effect in 2D-TMDs systems and its augmented optical and optoelectronic properties are reviewed. The phenomenon of plasmon-enhanced interaction in 2D-TMDs is briefly described and state-of-the-art hybrid device applications are comprehensively discussed. Finally, an outlook on future applications of these hybrid devices is provided.

2.
ChemSusChem ; 2020 Feb 26.
Artigo em Inglês | MEDLINE | ID: mdl-32103631

RESUMO

Hierarchical nano/micro-structured photocatalysts design draws attention to enhance photocatalytic performances. In this work, first time we report d eep eutectic solvents (DESs) assisted synthesis of flower structured BiOCl/BiVO 4 (BOC/BVO) with g-C 3 N 4 (BOC/BVO/g-CN) ternary heterojunction composites were successfully prepared using a simple wet-chemical method as a good acidic and alkaline oxygen evolution reaction (OER) catalysts. The OER activity showed on BOC/BVO/g-CN-15 achieved an enhanced photocatalytic activity with overpotential of 570 mV in 1M H 2 SO 4 and 220 mV in 1M KOH electrolyte at the current density of 10 mA cm -2 with excellent stability and extraordinary durability of the catalysts. The ternary heterojunctions reveal the extended lifetime of photogenerated charges and enhanced the separation efficiency of photogenerated electron-hole pairs, which is helpful to enhance the photocatalytic OER. Furthermore, we demonstrate the photocatalytic active performance of ternary heterojunctions in aqueous solution by using the photocatalytic dye degradation of methyl orange (MO) as a model pollutant displays a 95% degradation of 20 ppm of MO in 210 minutes under the irradiation of a 35 W Xe arc lamp. This works not only provides new insight into the design of catalysts using green solvents method, but also the design of highly efficient metal-free OER photocatalysts for applications in acidic and alkaline media.

3.
Proc Natl Acad Sci U S A ; 117(2): 902-906, 2020 Jan 14.
Artigo em Inglês | MEDLINE | ID: mdl-31892540

RESUMO

III-V compound semiconductors are widely used for electronic and optoelectronic applications. However, interfacing III-Vs with other materials has been fundamentally limited by the high growth temperatures and lattice-match requirements of traditional deposition processes. Recently, we developed the templated liquid-phase (TLP) crystal growth method for enabling direct growth of shape-controlled single-crystal III-Vs on amorphous substrates. Although in theory, the lowest temperature for TLP growth is that of the melting point of the group III metal (e.g., 156.6 °C for indium), previous experiments required a minimum growth temperature of 500 °C, thus being incompatible with many application-specific substrates. Here, we demonstrate low-temperature TLP (LT-TLP) growth of single-crystalline InP patterns at substrate temperatures down to 220 °C by first activating the precursor, thus enabling the direct growth of InP even on low thermal budget substrates such as plastics and indium-tin-oxide (ITO)-coated glass. Importantly, the material exhibits high electron mobilities and good optoelectronic properties as demonstrated by the fabrication of high-performance transistors and light-emitting devices. Furthermore, this work may enable integration of III-Vs with silicon complementary metal-oxide-semiconductor (CMOS) processing for monolithic 3D integrated circuits and/or back-end electronics.

4.
Opt Express ; 27(24): 35448-35467, 2019 Nov 25.
Artigo em Inglês | MEDLINE | ID: mdl-31878716

RESUMO

We demonstrate a highly sensitive, low-cost, environmental-friendly pressure sensor derived from a wool-based pressure sensor with wide pressure sensing range using wool bricks embedded with a Ag nano-wires. The easy fabrication and light weight allow portable and wearable device applications. Wth the integration of a light-emitting diode possessing multi-wavelength emission, we illustrate a hybrid multi-functional LED-integrated pressure sensor that is able to convert different applied pressures to light emission with different wavelengths. Due to the high sensitivity of the pressure sensor, the demonstration of acoustic signal detection has also been presented using sound of a metronome and a speaker playing a song. This multi-functional pressure sensor can be implemented to technologies such as smart lighting, health care, visible light communication (VLC), and other internet of things (IoT) applications.

5.
ACS Omega ; 4(17): 17536-17541, 2019 Oct 22.
Artigo em Inglês | MEDLINE | ID: mdl-31656926

RESUMO

The multilayer 1T-TaSe2 is successfully synthesized by annealing a Se-implanted Ta thin film on the SiO2/Si substrate. Material analyses confirm the 1T (octahedral) structure and the quasi-2D nature of the prepared TaSe2. Temperature-dependent resistivity reveals that the multilayer 1T-TaSe2 obtained by our method undergoes a commensurate charge-density wave (CCDW) transition at around 500 K. This synthesis process has been applied to synthesize MoSe2 and HfSe2 and expanded for synthesis of one more transition-metal dichalcogenide (TMD) material. In addition, the main issue of the process, that is, the excess metal capping on the TMD layers, is solved by the reduction of thickness of the as-deposited metal thin film in this work.

6.
ACS Nano ; 13(10): 11235-11248, 2019 Oct 22.
Artigo em Inglês | MEDLINE | ID: mdl-31424913

RESUMO

A three-dimensional (3D) composite consisting of nickel-cobalt (Ni-Co) dual hydroxide nanoneedles (NCDHNs) grown on a carbon nanotube (CNT) material, denoted as CNTs@NCDHNs, was designed using a facile one-step hydrothermal method. This composite was further fabricated into electrodes, which exhibited high rate capability and long cycle life. Comparative analysis of the electrochemical performance between 3D CNTs@NCDHNs electrodes and Ni-Co hydroxide electrodes revealed that the high rate capability and long cycle life of the CNTs@NCDHNs are due to a synergistic effect. The CNTs@NCDHNs exhibited a high specific capacitance of 1823 F g-1 at a current density of 1 A g-1, and more than 77.6% of the capacitance was retained at a charge-discharge rate of 20 A g-1. To evaluate the functional behavior of the CNTs@NCDHNs, quasi-solid-state cells using CNTs@NCDHNs as the positive electrode and rGO-Fe2O3 as the negative electrode were assembled and tested. These devices presented ultrafast charge-discharge rates of up to 20 A g-1 with high rate capabilities and excellent long-term cyclic stability. The corresponding quasi-solid-state device presented a high energy density of up to 54.6 Wh kg-1 at a power density of 1.13 kW kg-1 and an energy density of 35.8 Wh kg-1 at 12.4 kW kg-1 when a voltage in the range 0-1.6 V was applied. Moreover, the device exhibited optimal flexibility, stability, and safety under different extreme conditions.

7.
Nanoscale Res Lett ; 14(1): 213, 2019 Jun 25.
Artigo em Inglês | MEDLINE | ID: mdl-31240467

RESUMO

In this work, three-dimensional (3D) CoMoSe4 nanosheet arrays on network fibers of a carbon cloth denoted as CoMoSe4@C converted directly from CoMoO4 nanosheet arrays prepared by a hydrothermal process followed by the plasma-assisted selenization at a low temperature of 450 °C as an anode for sodium-ion battery (SIB) were demonstrated for the first time. With the plasma-assisted treatment on the selenization process, oxygen (O) atoms can be replaced by selenium (Se) atoms without the degradation on morphology at a low selenization temperature of 450 °C. Owing to the high specific surface area from the well-defined 3D structure, high electron conductivity, and bi-metal electrochemical activity, the superior performance with a large sodium-ion storage of 475 mA h g-1 under 0.5-3 V potential range at 0.1 A g-1 was accomplished by using this CoMoSe4@C as the electrode. Additionally, the capacity retention was well maintained over 80 % from the second cycle, exhibiting a satisfied capacity of 301 mA h g-1 even after 50 cycles. The work delivered a new approach to prepare a binary transition metallic selenide and definitely enriches the possibilities for promising anode materials in SIBs with high performances.

8.
Small ; 15(35): e1900578, 2019 Aug.
Artigo em Inglês | MEDLINE | ID: mdl-31165564

RESUMO

Ultrathin 2D molybdenum disulfide (MoS2 ), which is the flagship of 2D transition-metal dichalcogenide nanomaterials, has drawn much attention in the last few years. 2D MoS2 has been banked as an alternative to platinum for highly active hydrogen evolution reaction because of its low cost, high surface-to-volume ratio, and abundant active sites. However, when MoS2 is used directly as a photocatalyst, contrary to public expectation, it still performs poorly due to lateral size, high recombination ratio of excitons, and low optical cross section. Besides, simply compositing MoS2 as a cocatalyst with other semiconductors cannot satisfy the practical application, which stimulates the pursual of a comprehensive insight into recent advances in synthesis, properties, and enhanced hydrogen production of MoS2 . Therefore, in this Review, emphasis is given to synthetic methods, phase transitions, tunable optical properties, and interfacial engineering of 2D MoS2 . Abundant ways of band edge tuning, structural modification, and phase transition are addressed, which can generate the neoteric photocatalytic systems. Finally, the main challenges and opportunities with respect to MoS2 being a cocatalyst and coherent light-matter interaction of MoS2 in photocatalytic systems are proposed.

9.
ACS Appl Mater Interfaces ; 11(26): 23382-23391, 2019 Jul 03.
Artigo em Inglês | MEDLINE | ID: mdl-31184467

RESUMO

Semiconductor heterostructures have enabled numerous applications in diodes, photodetectors, junction field-effect transistors, and memory devices. Two-dimensional (2D) materials and III-V compound semiconductors are two representative materials providing excellent heterojunction platforms for the fabrication of heterostructure devices. The marriage between these semiconductors with completely different crystal structures may enable a new heterojunction with unprecedented physical properties. In this study, we demonstrate a multifunctional heterostructure device based on 2D black phosphorus and n-InGaAs nanomembrane semiconductors that exhibit gate-tunable, photoresponsive, and programmable diode characteristics. The device exhibits clear rectification with a large gate-tunable forward current, which displays rectification and switching with a maximum rectification ratio of 4600 and an on/off ratio exceeding 105, respectively. The device also offers nonvolatile memory properties, including large hysteresis and stable retention of storage charges. By combining the memory and gate-tunable rectifying properties, the rectification ratio of the device can be controlled and memorized from 0.06 to 400. Moreover, the device can generate three different electrical signals by combining a photoresponsivity of 0.704 A/W with the gate-tunable property, offering potential applications, for example, multiple logic operator. This work presents a heterostructure design based on 2D and III-V compound semiconductors, showing unique physical properties for the development of multifunctional heterostructure devices.

10.
Nanoscale ; 11(21): 10410-10419, 2019 May 30.
Artigo em Inglês | MEDLINE | ID: mdl-31112143

RESUMO

Utilization of light to boost the performance of gas sensors allows us to operate sensor devices at room temperature. Here, we, for the first time, demonstrated an indoor light-activated 3D cone-shaped MoS2 bilayer-based NO gas sensor with ppb-level detection operated at room-temperature. Large-area cone-shaped (CS)-MoS2 bilayers were grown by depositing 2 nm-thick MoO3 layers on a 2'' three-dimensional (3D) cone-patterned sapphire substrate (CPSS) followed by a sulfurization process via chemical vapor deposition. Because the exposed area of MoS2 bilayers is increased by 30%, the CS-MoS2 gas sensor (GS) demonstrated excellent performance with a response of ∼470% and a fast response time of ∼25 s after exposure to 1 ppm of NO gas illuminated by ultraviolet (UV) light with a wavelength of 365 nm. Such extraordinary performance at room temperature is attributed to the enhanced light absorption because of the light scattering effect caused by the 3D configuration and photo-desorption induced by UV illumination. For NO concentrations ranging from 2 ppm down to 0.06 ppm, the CS-MoS2 GS demonstrated a stable sensing behavior with a high response and fast response time (470% and 25 s at 2 ppm NO) because of the light absorption enhanced by the 3D structure and photo-desorption under constant UV illumination. The CS-MoS2 GS exhibits a high sensitivity (∼189.2 R% ppm-1), allowing the detection of NO gas at 0.06 ppm in 130 s. In addition, the 3D cone-shaped structure prolonged the presence of sulfur vapor around MoO3, allowing MoO3 to react with sulfur completely. Furthermore, the CS-MoS2 GS using an indoor lighting to detect NO gas at room temperature was demonstrated for the first time where the CS-MoS2 GS exhibits a stable cycling behavior with a high response (165% at 1 ppm NO) in 50 s; for concentration as low as ∼0.06 ppm, the response of ∼75% in 150 s can be achieved.

11.
Nat Commun ; 10(1): 1664, 2019 04 10.
Artigo em Inglês | MEDLINE | ID: mdl-30971702

RESUMO

Because of tunable bandgap and high carrier mobility, ternary III-V nanowires (NWs) have demonstrated enormous potential for advanced applications. However, the synthesis of large-scale and highly-crystalline InxGa1-xSb NWs is still a challenge. Here, we achieve high-density and crystalline stoichiometric InxGa1-xSb (0.09 < x < 0.28) NWs on amorphous substrates with the uniform phase-purity and <110 >-orientation via chemical vapor deposition. The as-prepared NWs show excellent electrical and optoelectronic characteristics, including the high hole mobility (i.e. 463 cm2 V-1 s-1 for In0.09Ga0.91Sb NWs) as well as broadband and ultrafast photoresponse over the visible and infrared optical communication region (1550 nm). Specifically, the In0.28Ga0.72Sb NW device yields efficient rise and decay times down to 38 and 53 µs, respectively, along with the responsivity of 6000 A W-1 and external quantum efficiency of 4.8 × 106 % towards 1550 nm regime. High-performance NW parallel-arrayed devices can also be fabricated to illustrate their large-scale device integrability for next-generation, ultrafast, high-responsivity and broadband photodetectors.

12.
Sensors (Basel) ; 19(7)2019 Apr 02.
Artigo em Inglês | MEDLINE | ID: mdl-30986913

RESUMO

In this work, we present a novel pH sensor using efficient laterally coupled structure enabled by Complementary Metal-Oxide Semiconductor (CMOS) Fin Field-Effect Transistor (FinFET) processes. This new sensor features adjustable sensitivity, wide sensing range, multi-pad sensing capability and compatibility to advanced CMOS technologies. With a self-balanced readout scheme and proposed corresponding circuit, the proposed sensor is found to be easily embedded into integrated circuits (ICs) and expanded into sensors array. To ensure the robustness of this new device, the transient response and noise analysis are performed. In addition, an embedded calibration operation scheme is implemented to prevent the proposed sensing device from the background offset from process variation, providing reliable and stable sensing results.

13.
ACS Appl Mater Interfaces ; 11(16): 14786-14795, 2019 Apr 24.
Artigo em Inglês | MEDLINE | ID: mdl-30900877

RESUMO

Doping nonmetal atoms into layered transition metal dichalcogenide MX2 structures has emerged as a promising strategy for enhancing their catalytic activities for the hydrogen evolution reaction. In this study, we developed a new and efficient one-step approach that involves simultaneous plasma-induced doping and exfoliating of MX2 bulk into nanosheets-such as MoSe2, WSe2, MoS2, and WS2 nanosheets-within a short time and at a low temperature (ca. 80 °C). Specifically, by utilizing active plasma that is generated with an asymmetric electrical field during the electrochemical reaction at the surface of the submerged cathode tip, we are able to achieve doping of nitrogen atoms, from the electrolytes, into the semiconducting 2H-MX2 structures during their exfoliation process from the bulk states, forming N-doped MX2. We selected N-doped MoS2 nanosheets for demonstrating their catalytic hydrogen evolution potential. We modulated the electronic and transport properties of the MoS2 structure with the synergy of nitrogen doping and exfoliating for enhancing their catalytic activity. We found that the nitrogen concentration of 5.2 atom % at N-doped MoS2 nanosheets have an excellent catalytic hydrogen evolution reaction, where a low overpotential of 164 mV at a current density of 10 mA cm-2 and a small Tafel slope of 71 dec mV-1-much lower than those of exfoliated MoS2 nanosheets (207 mV, 82 dec mV-1) and bulk MoS2 (602 mV, 198 dec mV-1)-as well as an extraordinary long-term stability of >25 h in 0.5 M H2SO4 can be achieved.

14.
Small ; 15(8): e1803529, 2019 Feb.
Artigo em Inglês | MEDLINE | ID: mdl-30663255

RESUMO

A facile approach for the synthesis of Au- and Pt-decorated CuInS2 nanocrystals (CIS NCs) as sensitizer materials on the top of MoS2 bilayers is demonstrated. A single surfactant (oleylamine) is used to prepare such heterostructured noble metal decorated CIS NCs from the pristine CIS. Such a feasible way to synthesize heterostructured noble metal decorated CIS NCs from the single surfactant can stimulate the development of the functionalized heterostructured NCs in large scale for practical applications such as solar cells and photodetectors. Photodetectors based on MoS2 bilayers with the synthesized nanocrystals display enhanced photocurrent, almost 20-40 times higher responsivity and the On/Off ratio is enlarged one order of magnitude compared with the pristine MoS2 bilayers-based photodetectors. Remarkably, by using Pt- or Au-decorated CIS NCs, the photocurrent enhancement of MoS2 photodetectors can be tuned between blue (405 nm) to green (532 nm). The strategy described here acts as a perspective to significantly improve the performance of MoS2 -based photodetectors with the controllable absorption wavelengths in the visible light range, showing the feasibility of the possible color detection.

15.
Nanoscale Res Lett ; 13(1): 242, 2018 Aug 17.
Artigo em Inglês | MEDLINE | ID: mdl-30120632

RESUMO

Few-layer graphene sheet-passivated porous silicon (PSi) as an outstanding electrochemical double-layer supercapacitor electrode was demonstrated. The PSi matrix was formed by electrochemical etching of a doped silicon wafer and was further surface-passivated with few-layer graphene sheets by a Ni-assisted chemical vapor deposition process where a wide range of porous PSi structures, including mesoporous, macroporous, and hybrid porous structures were created during the graphene growth as temperature increases. The microstructural and graphene-passivation effects on the capacitive performance of the PSi were investigated in detail. The hybrid porous PSi electrode, optimized in terms of capacitive performances, achieves a high areal capacitance of 6.21 mF/cm2 at an ultra-high scan rate of 1000 mV/s and an unusual progressing cyclic stability of 131% at 10,000 cycles. Besides mesopores and macropores, micropores were introduced onto the surfaces of the passivating few-layer graphene sheets with a KOH activation process to further increase the functioning surface area of the hierarchical porous PSi electrode, leading to a boost in the areal capacitance by 31.4% up to 8.16 mF/cm2. The present designed hierarchical porous PSi-based supercapacitor proves to be a robust energy storage device for microelectronic applications that require stable high rate capability.

16.
ACS Appl Mater Interfaces ; 10(41): 35477-35486, 2018 Oct 17.
Artigo em Inglês | MEDLINE | ID: mdl-30107132

RESUMO

Selenium (Se) is one of the potential candidates as photodetector because of its outstanding properties such as high photoconductivity (∼8 × 104 S cm-1), piezoelectricity, thermoelectricity, and nonlinear optical responses. Solution phase synthesis becomes an efficient way to produce Se, but a contamination issue that could deteriorate the electric characteristic of Se should be taken into account. In this work, a facile, controllable approach of synthesizing Se nanowires (NWs)/films via a plasma-assisted growth process was demonstrated at the low substrate temperature of 100 °C. The detailed formation mechanisms of nanowires arrays to thin films at different plasma powers were investigated. Moreover, indium (In) layer was used to enhance the adhesive strength with 50% improvement on a SiO2/Si substrate by mechanical interlocking and surface alloying between Se and In layers, indicating great tolerance for mechanical stress for future wearable devices applications. Furthermore, the direct growth of Se NWs/films on a poly(ethylene terephthalate) substrate was demonstrated, exhibiting a visible to broad infrared detection ranges from 405 to 1555 nm with a high on/off ratio of ∼700 as well as the fast response time less than 25 ms. In addition, the devices exhibited fascinating stability in the atmosphere over one month.

17.
ACS Appl Mater Interfaces ; 10(41): 35571-35579, 2018 Oct 17.
Artigo em Inglês | MEDLINE | ID: mdl-30152235

RESUMO

We demonstrate, for the first time, a new method of fabricating hybrid MoS2/poly(ethyleneimine)-modified graphene oxide (PEI-GO) composites assembled through electrostatically charged interaction between the negatively charged MoS2 nanosheets and positively charged PEI-GO in an aqueous solution. The GO can not only improve the electronic conductivity of the MoS2/PEI-GO composites, leading to an excellent charge-transfer network, but also hamper the restacking of MoS2 nanosheets. The composition ratios between MoS2 and PEI-GO were also optimized with the highest specific capacitance of 153.9 F g-1 where 96.0% of the initial specific capacitance remains after 6800 cycles. The specific capacitance of only 117.5 F g-1 was observed for the pure MoS2 nanosheets, and 68.2% of the initial specific capacitance was achieved after 5000 cycles. The excellent electrochemical performance of the hybrid MoS2/PEI-GO composites was demonstrated by establishing an asymmetric supercapacitor with a MoS2/PEI-GO-based negative electrode and an activated-carbon positive electrode. The asymmetric supercapacitor provided a maximum capacitance of 42.9 F g-1, and 93.1% of the initial capacitance was maintained after 8000 cycles. Furthermore, a MoS2/PEI-GO//activated-carbon asymmetric supercapacitor delivered an energy density of 19.3 W h kg-1 and a power density of 4500 W kg-1, indicating the potential of the hybrid MoS2/PEI-GO composites in electrochemical energy storage applications.

18.
Small ; 14(38): e1800541, 2018 Sep.
Artigo em Inglês | MEDLINE | ID: mdl-30133161

RESUMO

In this work, polymethylmethacrylate (PMMA) as a superior mediate for the pressure welding of silver nanowires (Ag NWs) networks as transparent electrodes without any thermal treatment is demonstrated. After a pressing of 200 kg cm-2 , not only the sheet resistance but also the surface roughness of the PMMA-mediated Ag NWs networks decreases from 2.6 kΩ sq-1 to 34.3 Ω sq-1 and from 76.1 to 12.6 nm, respectively. On the other hand, high transparency of an average transmittance in the visible wavelengths of 93.5% together with a low haze value of 2.58% can be achieved. In terms of optoelectronic applications, the promising potential of the PMMA-mediated pressure-welded Ag NWs networks used as a transparent electrode in a green organic light-emitting diode (OLED) device is also demonstrated. In comparison with the OLED based on commercial tin-doped indium oxide electrode, the increments of power efficiency and external quantum efficiency (EQE) from 80.1 to 85.9 lm w-1 and 19.2% to 19.9% are demonstrated. In addition, the PMMA-mediated pressure welding succeeds in transferring Ag NWs networks to flexible polyethylene naphthalate and polyimide substrates with the sheet resistance of 42 and 91 Ω sq-1 after 10 000 times of bending, respectively.

19.
Small ; 14(22): e1704052, 2018 May.
Artigo em Inglês | MEDLINE | ID: mdl-29707890

RESUMO

Phase-engineered type-II metal-selenide heterostructures are demonstrated by directly selenizing indium-tin oxide to form multimetal selenides in a single step. The utilization of a plasma system to assist the selenization facilitates a low-temperature process, which results in large-area films with high uniformity. Compared to single-metal-selenide-based photodetectors, the multimetal-selenide photodetectors exhibit obviously improved performance, which can be attributed to the Schottky contact at the interface for tuning the carrier transport, as well as the type-II heterostructure that is beneficial for the separation of the electron-hole pairs. The multimetal-selenide photodetectors exhibit a response to light over a broad spectrum from UV to visible light with a high responsivity of 0.8 A W-1 and an on/off current ratio of up to 102 . Interestingly, all-transparent photodetectors are successfully produced in this work. Moreover, the possibility of fabricating devices on flexible substrates is also demonstrated with sustainable performance, high strain tolerance, and high durability during bending tests.

20.
Small ; 14(19): e1800032, 2018 May.
Artigo em Inglês | MEDLINE | ID: mdl-29635730

RESUMO

The formation of PtSe2 -layered films is reported in a large area by the direct plasma-assisted selenization of Pt films at a low temperature, where temperatures, as low as 100 °C at the applied plasma power of 400 W can be achieved. As the thickness of the Pt film exceeds 5 nm, the PtSe2 -layered film (five monolayers) exhibits a metallic behavior. A clear p-type semiconducting behavior of the PtSe2 -layered film (≈trilayers) is observed with the average field effective mobility of 0.7 cm2 V-1 s-1 from back-gated transistor measurements as the thickness of the Pt film reaches below 2.5 nm. A full PtSe2 field effect transistor is demonstrated where the thinner PtSe2 , exhibiting a semiconducting behavior, is used as the channel material, and the thicker PtSe2 , exhibiting a metallic behavior, is used as an electrode, yielding an ohmic contact. Furthermore, photodetectors using a few PtSe2 -layered films as an adsorption layer synthesized at the low temperature on a flexible substrate exhibit a wide range of absorption and photoresponse with the highest photocurrent of 9 µA under the laser wavelength of 408 nm. In addition, the device can maintain a high photoresponse under a large bending stress and 1000 bending cycles.

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