Your browser doesn't support javascript.
Mostrar: 20 | 50 | 100
Resultados 1 - 5 de 5
Filtrar
Mais filtros










Base de dados
Intervalo de ano de publicação
1.
Sci Rep ; 9(1): 18095, 2019 Dec 02.
Artigo em Inglês | MEDLINE | ID: mdl-31792272

RESUMO

On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in the blue spectral range based on microdisks and bus waveguides in III-nitride on silicon. We report on the interplay between microdisk-waveguide coupling and its optical properties. We observe critical coupling and phase matching, i.e. the most efficient energy transfer scheme, for very short gap sizes and thin waveguides (g = 45 nm and w = 170 nm) in the spontaneous emission regime. Whispering gallery mode lasing is demonstrated for a wide range of parameters with a strong dependence of the threshold on the loaded quality factor. We show the dependence and high sensitivity of the output signal on the coupling. Lastly, we observe the impact of processing on the tuning of mode resonances due to the very short coupling distances. Such small footprint on-chip integrated microlasers providing maximum energy transfer into a photonic circuit have important potential applications for visible-light communication and lab-on-chip bio-sensors.

2.
Sci Rep ; 9(1): 259, 2019 Jan 22.
Artigo em Inglês | MEDLINE | ID: mdl-30670785

RESUMO

In recent years much effort has been made to increase the Sn content in GeSn alloys in order to increase direct bandgap charge carrier recombination and, therefore, to reach room temperature lasing. While being successful for the former, the increase of Sn content is detrimental, leading to increased defect concentrations and a lower thermal budget regarding processing. In this work we demonstrate strong photoluminescence enhancement in low Sn content Ge0.94Sn0.06 layers by implementing tensile strain. Fitting of the calculated photoluminescence spectra to reproduce our experimental results indicates a strain of ~1.45%, induced via an SiNx stressor layer, which is strong enough to transform the investigated layer into a direct bandgap semiconductor. Moreover, theoretical calculations, using the 8-band k·p model, show the advantages of using low Sn content tensile strained GeSn layers in respect to gain and lasing temperature. We show that low Sn content GeSn alloys have a strong potential to enable efficient room temperature lasers on electronic-photonic integrated circuits.

3.
Opt Express ; 26(5): 6400-6406, 2018 Mar 05.
Artigo em Inglês | MEDLINE | ID: mdl-29529832

RESUMO

We demonstrate that conformal encapsulation using atomic layer deposition of GaAs nano-cavity resonator made of photonic crystal cavity prevents photo-induced oxidation. This improvement allows injecting a large quantity of energy in the resonator without any degradation of the material, thus enabling spectral stability of the resonance. We prove second harmonic and third harmonic generation over more than one decade of pump power variation, thanks to this encapsulation, with a total efficiency (ηSHG = 8.3 × 10-5 W-1 and ηTHG = 1.2 × 10-3 W-2 ) and a large net output energy for both operations (PSHGout=0.2nW and PTHGout=8pW).

4.
Opt Express ; 17(5): 3500-7, 2009 Mar 02.
Artigo em Inglês | MEDLINE | ID: mdl-19259188

RESUMO

We study the spontaneous Raman scattering in a W1 photonic crystal waveguide on silicon-on-insulator where the lower silica cladding remains. Despite the vertical asymmetry that exists in such a waveguide, we numerically and experimentally show that the propagation losses at the pump and the Stokes wavelengths remain low enough to allow a significant exaltation of the spontaneous Raman scattering. In particular, we observe a reshaping of the Raman spectrum and a more than ten-fold enhancement of the Raman scattering efficiency in a W1 photonic crystal waveguide as compared to a single-mode ridge waveguide.

5.
Opt Express ; 16(16): 12278-89, 2008 Aug 04.
Artigo em Inglês | MEDLINE | ID: mdl-18679505

RESUMO

Photonic crystals exhibiting a photonic band gap in both TE and TM polarizations are particularly interesting for a better control of light confinement. The simultaneous achievement of large band gaps in both polarizations requires to reduce the symmetry properties of the photonic crystal lattice. In this letter, we propose two different designs of two-dimensional photonic crystals patterned in high refractive index thin silicon slabs. These slabs are known to limit the opening of photonic band gaps for both polarizations. The proposed designs exhibit large complete photonic band gaps: the first photonic crystal structure is based on the honey-comb lattice with two different hole radii and the second structure is based on a "tri-ellipse" pattern in a triangular lattice. Photonic band gap calculations show that these structures offer large complete photonic band gaps deltaomega/omega larger than 10% between first and second photonic bands. This figure of merit is obtained with single-mode slab waveguides and is not restricted to modes below light cone.


Assuntos
Projeto Auxiliado por Computador , Modelos Teóricos , Óptica e Fotônica/instrumentação , Refratometria/instrumentação , Simulação por Computador , Desenho de Equipamento , Análise de Falha de Equipamento , Fótons
SELEÇÃO DE REFERÊNCIAS
DETALHE DA PESQUISA