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1.
ACS Nano ; 13(4): 3847-3857, 2019 Apr 23.
Artigo em Inglês | MEDLINE | ID: mdl-30816692

RESUMO

Multifunctional wearable e-textiles have been a focus of much attention due to their great potential for healthcare, sportswear, fitness, space, and military applications. Among them, electroconductive textile yarn shows great promise for use as next-generation flexible sensors without compromising the properties and comfort of usual textiles. However, the current manufacturing process of metal-based electroconductive textile yarn is expensive, unscalable, and environmentally unfriendly. Here we report a highly scalable and ultrafast production of graphene-based flexible, washable, and bendable wearable textile sensors. We engineer graphene flakes and their dispersions in order to select the best formulation for wearable textile application. We then use a high-speed yarn dyeing technique to dye (coat) textile yarn with graphene-based inks. Such graphene-based yarns are then integrated into a knitted structure as a flexible sensor and could send data wirelessly to a device via a self-powered RFID or a low-powered Bluetooth. The graphene textile sensor thus produced shows excellent temperature sensitivity, very good washability, and extremely high flexibility. Such a process could potentially be scaled up in a high-speed industrial setup to produce tonnes (∼1000 kg/h) of electroconductive textile yarns for next-generation wearable electronics applications.

2.
Nat Commun ; 10(1): 987, 2019 02 25.
Artigo em Inglês | MEDLINE | ID: mdl-30804336

RESUMO

The original version of this Article contained an error in the spelling of the author Matthew Holwill, which was incorrectly given as Mathew Holwill. This has now been corrected in both the PDF and HTML versions of the Article.

3.
Nat Commun ; 10(1): 230, 2019 01 16.
Artigo em Inglês | MEDLINE | ID: mdl-30651554

RESUMO

Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures. Thus, planar heterostructures allow p-n junctions between different two-dimensional semiconductors and graphene nanoribbons with well-defined edges; and vertical heterostructures resulted in the observation of superconductivity in purely carbon-based systems and realisation of vertical tunnelling transistors. Here we demonstrate simultaneous use of in-plane and van der Waals heterostructures to build vertical single electron tunnelling transistors. We grow graphene quantum dots inside the matrix of hexagonal boron nitride, which allows a dramatic reduction of the number of localised states along the perimeter of the quantum dots. The use of hexagonal boron nitride tunnel barriers as contacts to the graphene quantum dots make our transistors reproducible and not dependent on the localised states, opening even larger flexibility when designing future devices.

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