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1.
J Nanosci Nanotechnol ; 14(5): 3925-7, 2014 May.
Artigo em Inglês | MEDLINE | ID: mdl-24734665

RESUMO

The energy discontinuity in the valence band (deltaE(v)) of Y2O3-stabilized ZrO2 (YSZ)/InGaZnO4 (IGZO) heterostructures was obtained from X-ray photoelectron spectroscopy (XPS) measurements. The YSZ exhibited a bandgap of 4.4 eV from absorption measurements. A value of deltaE(v) = 0.57 +/- 0.12 eV was obtained by using Ga 2P3/2, Zn 2p3/2 and In 3d5/2 energy levels as references. This implies a conduction band offset (deltaE(c)) of 0.63 eV in YSZ/InGaZnO4 heterostructures and a nested interface band alignment.

2.
J Nanosci Nanotechnol ; 8(1): 99-110, 2008 Jan.
Artigo em Inglês | MEDLINE | ID: mdl-18468056

RESUMO

A brief review is given of recent developments in wide bandgap semiconductor nanowire synthesis and devices fabricated on these nanostructures. There is strong interest in these devices for applications in UV detection, gas sensors and transparent electronics.

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