Your browser doesn't support javascript.
Mostrar: 20 | 50 | 100
Resultados 1 - 4 de 4
Mais filtros

Base de dados
Intervalo de ano de publicação
Angew Chem Int Ed Engl ; 57(52): 17104-17109, 2018 Dec 21.
Artigo em Inglês | MEDLINE | ID: mdl-30370970


Dissolution of elemental gold in organic solutions is a contemporary approach to lower the environmental burden associated with gold recycling. Herein, we describe fundamental studies on a highly efficient method for the dissolution of elemental Au that is based on DMF solutions containing pyridine-4-thiol (4-PSH) as a reactive ligand and hydrogen peroxide as an oxidant. Dissolution of Au proceeds through several elementary steps: isomerization of 4-PSH to pyridine-4-thione (4-PS), coordination with Au0 , and then oxidation of the Au0 thione species to AuI simultaneously with oxidation of free pyridine thione to elemental sulfur and further to sulfuric acid. The final dissolution product is a AuI complex bearing two 4-PS ligands and SO4 2- as a counterion. The ligand is crucial as it assists the oxidation process and stabilizes and solubilizes the formed Au cations.

Angew Chem Int Ed Engl ; 57(44): 14538-14542, 2018 Oct 26.
Artigo em Inglês | MEDLINE | ID: mdl-30048031


Rhenium is both a refractory metal and a noble metal that has attractive properties for various applications. Still, synthesis and applications of rhenium thin films have been limited. We introduce herein the growth of both rhenium metal and rhenium nitride thin films by the technologically important atomic layer deposition (ALD) method over a wide deposition temperature range using fast, simple, and robust surface reactions between rhenium pentachloride and ammonia. Films are grown and characterized for compositions, surface morphologies and roughnesses, crystallinities, and resistivities. Conductive rhenium subnitride films of tunable composition are obtained at deposition temperatures between 275 and 375 °C, whereas pure rhenium metal films grow at 400 °C and above. Even a just 3 nm thick rhenium film is continuous and has a low resistivity of about 90 µΩ cm showing potential for applications for which also other noble metals and refractory metals have been considered.

Adv Mater ; 30(24): e1703622, 2018 Jun.
Artigo em Inglês | MEDLINE | ID: mdl-29315833


2D materials research is advancing rapidly as various new "beyond graphene" materials are fabricated, their properties studied, and materials tested in various applications. Rhenium disulfide is one of the 2D transition metal dichalcogenides that has recently shown to possess extraordinary properties such as that it is not limited by the strict monolayer thickness requirements. The unique inherent decoupling of monolayers in ReS2 combined with a direct bandgap and highly anisotropic properties makes ReS2 one of the most interesting 2D materials for a plethora of applications. Here, a highly controllable and precise atomic layer deposition (ALD) technique is applied to deposit ReS2 thin films. Film growth is demonstrated on large area (5 cm × 5 cm) substrates at moderate deposition temperatures between 120 and 500 °C, and the films are extensively characterized using field emission scanning electron microscopy/energy-dispersive X-ray spectroscopy, X-ray diffractometry using grazing incidence, atomic force microscopy, focused ion beam/transmission electron microscopy, X-ray photoelectron spectroscopy, and time-of-flight elastic recoil detection analysis techniques. The developed ReS2 ALD process highlights the potential of the material for applications beyond planar structure architectures. The ALD process also offers a route to an upgrade to an industrial scale.

Langmuir ; 32(41): 10559-10569, 2016 Oct 18.
Artigo em Inglês | MEDLINE | ID: mdl-27673703


Nucleation and conformality are important issues, when depositing thin films for demanding applications. In this study, iridium and iridium dioxide (IrO2) films were deposited by atomic layer deposition (ALD), using five different processes. Different reactants, namely, O2, air, consecutive O2 and H2 (O2 + H2), and consecutive O3 and H2 (O3 + H2) pulses were used with iridium acetylacetonate [Ir(acac)3] to deposit Ir, while IrO2 was deposited using Ir(acac)3 and O3. Nucleation was studied using a combination of methods for film thickness and morphology evaluation. In conformality studies, microscopic lateral high-aspect-ratio (LHAR) test structures, specifically designed for accurate and versatile conformality testing of ALD films, were used. The order of nucleation, from the fastest to the slowest, was O2 + H2 > air ≈ O2 > O3 > O3 + H2, whereas the order of conformality, from the best to the worst, was O3 + H2 > O2 + H2 > O2 > O3. In the O3 process, a change in film composition from IrO2 to metallic Ir was seen inside the LHAR structures. Compared to the previous reports on ALD of platinum-group metals, most of the studied processes showed good to excellent results.