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Nanoscale Res Lett ; 14(1): 360, 2019 Dec 02.
Artigo em Inglês | MEDLINE | ID: mdl-31792627


Hybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS2 on ß-Ga2O3([Formula: see text]01) with and without nitridation. The conduction and valence band offsets for unnitrided 2D-MoS2/3D-ß-Ga2O3 heterojunction were determined to be respectively 0.43 ± 0.1 and 2.87 ± 0.1 eV. For the nitrided heterojunction, the conduction and valence band offsets were deduced to 0.68 ± 0.1 and 2.62 ± 0.1 eV, respectively. The modified band alignment could result from the dipole formed by charge transfer across the heterojunction interface. The effect of nitridation on the band alignments between group III oxides and transition metal dichalcogenides will supply feasible technical routes for designing their heterojunction-based electronic and optoelectronic devices.

Nanoscale Res Lett ; 14(1): 181, 2019 May 29.
Artigo em Inglês | MEDLINE | ID: mdl-31144185


The effect of nitridation treatment on the band alignment between few-layer MoS2 and HfO2 has been investigated by X-ray photoelectron spectroscopy. The valence (conduction) band offsets of MoS2/HfO2 with and without nitridation treatment were determined to be 2.09 ± 0.1 (2.41 ± 0.1) and 2.34 ± 0.1 (2.16 ± 0.1) eV, respectively. The tunable band alignment could be attributed to the Mo-N bonding formation and surface band bending for HfO2 triggered by nitridation. This study on the energy band engineering of MoS2/HfO2 heterojunctions may also be extended to other high-k dielectrics for integrating with two-dimensional materials to design and optimize their electronic devices.

Nanoscale Res Lett ; 13(1): 412, 2018 Dec 24.
Artigo em Inglês | MEDLINE | ID: mdl-30584649


The energy band alignment of ZnO/ß-Ga2O3 ([Formula: see text]) heterojunction was characterized by X-ray photoelectron spectroscopy (XPS). The ZnO films were grown by using atomic layer deposition at various temperatures. A type-I band alignment was identified for all the ZnO/ß-Ga2O3 heterojunctions. The conduction (valence) band offset varied from 1.26 (0.20) eV to 1.47 (0.01) eV with the growth temperature increasing from 150 to 250 °C. The increased conduction band offset with temperature is mainly contributed by Zn interstitials in ZnO film. In the meanwhile, the acceptor-type complex defect Vzn + OH could account for the reduced valence band offset. These findings will facilitate the design and physical analysis of ZnO/ß-Ga2O3 relevant electronic devices.

Nanoscale Res Lett ; 13(1): 246, 2018 Aug 22.
Artigo em Inglês | MEDLINE | ID: mdl-30136254


Ultra-wide bandgap beta-gallium oxide (ß-Ga2O3) has been attracting considerable attention as a promising semiconductor material for next-generation power electronics. It possesses excellent material properties such as a wide bandgap of 4.6-4.9 eV, a high breakdown electric field of 8 MV/cm, and exceptional Baliga's figure of merit (BFOM), along with superior chemical and thermal stability. These features suggest its great potential for future applications in power and optoelectronic devices. However, the critical issue of contacts between metal and Ga2O3 limits the performance of ß-Ga2O3 devices. In this work, we have reviewed the advances on contacts of ß-Ga2O3 MOSFETs. For improving contact properties, four main approaches are summarized and analyzed in details, including pre-treatment, post-treatment, multilayer metal electrode, and introducing an interlayer. By comparison, the latter two methods are being studied intensively and more favorable than the pre-treatment which would inevitably generate uncontrollable damages. Finally, conclusions and future perspectives for improving Ohmic contacts further are presented.