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1.
Artigo em Inglês | MEDLINE | ID: mdl-34668371

RESUMO

Oxide thin-film transistors (TFTs) have attracted much attention because they can be applied to flexible and large-scaled switching devices. Especially, oxide semiconductors (OSs) have been developed as active layers of TFTs. Among them, indium-gallium-zinc oxide (IGZO) is actively used in the organic light-emitting diode display field. However, despite their superior off-state properties, IGZO TFTs are limited by low field-effect mobility, which critically affects display resolution and power consumption. Herein, we determine new working mechanisms in dual-stacked OS, and based on this, we develop a dual-stacked OS-based TFT with improved performance: high field-effect mobility (∼80 cm2/V·s), ideal threshold voltage near 0 V, high on-off current ratio (>109), and good stability at bias stress. Induced areas are formed at the interface by the band offset: band offset-induced area (BOIA) and BOIA-induced area (BIA). They connect the gate bias-induced area (GBIA) and electrode bias-induced area (EBIA), resulting in high current flow. Equivalent circuit modeling and the transmission line method are also introduced for more precise verification. By verifying current change with gate voltage in the single OS layer, the current flowing direction in the dual-stacked OS is calculated and estimated. This is powerful evidence to understand the conduction mechanism in a dual-stacked OS-based TFT, and it will provide new design rules for high-performance OS-based TFTs.

2.
Biomol Ther (Seoul) ; 2021 Sep 27.
Artigo em Inglês | MEDLINE | ID: mdl-34565718

RESUMO

Researchers have endeavored to identify the etiology of inflammatory bowel diseases, including Crohn's disease and ulcerative colitis. Though the pathogenesis of inflammatory bowel diseases remains unknown, dysregulation of the immune system in the host gastrointestinal tract is believed to be the major causative factor. Omics is a powerful methodological tool that can reveal biochemical information stored in clinical samples. Lipidomics is a subset of omics that explores the lipid classes associated with inflammation. One objective of the present systematic review was to facilitate the identification of biochemical targets for use in future lipidomic studies on inflammatory bowel diseases. The use of high-resolution mass spectrometry to observe alterations in global lipidomics might help elucidate the immunoregulatory mechanisms involved in inflammatory bowel diseases and discover novel biomarkers for them. Assessment of the characteristics of previous clinical trials on inflammatory bowel diseases could help researchers design and establish patient selection and analytical method criteria for future studies on these conditions. In this study, we curated literature exclusively from four databases and extracted lipidomics-related data from literature, considering criteria. This paper suggests that the lipidomics approach toward research in inflammatory bowel diseases can clarify their pathogenesis and identify clinically valuable biomarkers to predict and monitor their progression.

3.
Theranostics ; 11(16): 8092-8111, 2021.
Artigo em Inglês | MEDLINE | ID: mdl-34335982

RESUMO

Active c-Src non-receptor tyrosine kinase localizes to the plasma membrane via N-terminal lipid modification. Membranous c-Src causes cancer initiation and progression. Even though transmembrane 4 L six family member 5 (TM4SF5), a tetraspan(in), can be involved in this mechanism, the molecular and structural influence of TM4SF5 on c-Src remains unknown. Methods: Here, we investigated molecular and structural details by which TM4SF5 regulated c-Src devoid of its N-terminus and how cell-penetrating peptides were able to interrupt c-Src activation via interference of c-Src-TM4SF5 interaction in hepatocellular carcinoma models. Results: The TM4SF5 C-terminus efficiently bound the c-Src SH1 kinase domain, efficiently to the inactively-closed form. The complex involved protein tyrosine phosphatase 1B able to dephosphorylate Tyr530. The c-Src SH1 domain alone, even in a closed form, bound TM4SF5 to cause c-Src Tyr419 and FAK Y861 phosphorylation. Homology modeling and molecular dynamics simulation studies predicted the directly interfacing residues, which were further validated by mutational studies. Cell penetration of TM4SF5 C-terminal peptides blocked the interaction of TM4SF5 with c-Src and prevented c-Src-dependent tumor initiation and progression in vivo. Conclusions: Collectively, these data demonstrate that binding of the TM4SF5 C-terminus to the kinase domain of inactive c-Src leads to its activation. Because this binding can be abolished by cell-penetrating peptides containing the TM4SF5 C-terminus, targeting this direct interaction may be an effective strategy for developing therapeutics that block the development and progression of hepatocellular carcinoma.


Assuntos
Proteína Tirosina Quinase CSK/metabolismo , Carcinoma Hepatocelular/metabolismo , Proteínas de Membrana/metabolismo , Proteína Tirosina Quinase CSK/genética , Carcinoma Hepatocelular/genética , Carcinoma Hepatocelular/patologia , Linhagem Celular Tumoral , Movimento Celular/fisiologia , Genes src/genética , Genes src/fisiologia , Humanos , Neoplasias Hepáticas/genética , Neoplasias Hepáticas/metabolismo , Neoplasias Hepáticas/patologia , Proteínas de Membrana/genética , Proteínas de Membrana/fisiologia , Peptídeos/metabolismo , Fosforilação , Proteínas Tirosina Quinases/metabolismo , Transdução de Sinais , Tetraspaninas/genética , Tetraspaninas/metabolismo
4.
ACS Appl Mater Interfaces ; 13(7): 8552-8562, 2021 Feb 24.
Artigo em Inglês | MEDLINE | ID: mdl-33566562

RESUMO

Metal oxide semiconductors doped with additional inorganic cations have insufficient electron mobility for next-generation electronic devices so strategies to realize the semiconductors exhibiting stability and high performance are required. To overcome the limitations of conventional inorganic cation doping to improve the electrical characteristics and stability of metal oxide semiconductors, we propose solution-processed high-performance metal oxide thin-film transistors (TFTs) by incorporating polyaniline (PANI), a conductive polymer, in a metal oxide matrix. The chemical interaction between the metal oxide and PANI demonstrated that the defect sites and crystallinity of the semiconductor layer are controllable. In addition, the change in oxygen-related chemical bonding of PANI-doped indium oxide (InOx) TFTs induces superior electrical characteristics compared to pristine InOx TFTs, even though trace amounts of PANI are doped in the semiconductor. In particular, the average field-effect mobility remarkably enhanced from 15.02 to 26.58 cm2 V-1 s-1, the on/off current ratio improved from 108 to 109, and the threshold voltage became close to 0 V actually from -7.9 to -1.4 V.

5.
Nanotechnology ; 31(47): 475203, 2020 Sep 11.
Artigo em Inglês | MEDLINE | ID: mdl-32914759

RESUMO

The exact direction of the surface energy characterized functional groups of self-assembled monolayers (SAMs) is proposed for achieving enhanced electrical stability of indium gallium zinc oxide (IGZO) semiconductor thin film transistors (TFTs). The SAM treatment, particularly with the SAM functional group having lower surface energy, makes it difficult to adsorb oxygen molecules difficult onto IGZO. Such an effect greatly improves the positive bias stability (PBS) and clockwise hysteresis stability. For NH2 and CF3 functional groups, SAMs with surface energies of 49.4 mJ m-2 and 23.5 mJ m-2, respectively, improved the IGZO TFT PBS from 2.47 V to 0.32 V after the SAM treatment and the IGZO TFT clockwise hysteresis was also enhanced from 0.23 V to 0.11 V without any deterioration of TFT characteristics. Employing lower surface energy functional groups to the SAM, of the same head and body groups, passivates and protects the IGZO backchannel region from oxygen molecules in the atmosphere. Consequently, the enhanced electrical stability of IGZO TFTs can be achieved by the simple and economic SAM treatment.

6.
Nanotechnology ; 2020 Aug 07.
Artigo em Inglês | MEDLINE | ID: mdl-32764196

RESUMO

The exact direction, of the surface energy characterized functional group of self-assembled monolayer (SAM), is proposed for achieving the enhanced electrical stability of indium gallium zinc oxide (IGZO) semiconductor thin film transistor (TFT). The SAM treatment, particularly at the SAM functional group having lower surface energy, makes oxygen molecules difficult to be adsorbed onto IGZO. And such an effect much improves positive bias stability (PBS) and clockwise hysteresis stability to the same tendency. For NH2 and CF3 functional group SAMs with surface energies of 49.4 mJ/m2 and 23.5 mJ/m2, respectively, the IGZO TFT PBS was improved from 2.47 V to 0.32 V after the SAM treatment and the IGZO TFT clockwise hysteresis was also enhanced from 0.23 V to 0.11 V without any deterioration of TFT characteristics. Employing lower surface energy functional group to the SAM, of same head group and body group, does passivate and protect the IGZO backchannel region from oxygen molecules in the atmosphere. Consequently, the enhanced electrical stability of IGZO TFT can be achieved by the simple and economic SAM treatment.

7.
Nutrients ; 12(1)2020 Jan 06.
Artigo em Inglês | MEDLINE | ID: mdl-31935866

RESUMO

Clinical applications of ginger with an expectation of clinical benefits are receiving significant attention. This systematic review aims to provide a comprehensive discussion in terms of the clinical effects of ginger in all reported areas. Following the preferred reporting items for systematic reviews and meta-analyses (PRISMA) guideline, randomized controlled trials on the effects of ginger were investigated. Accordingly, 109 eligible papers were fully extracted in terms of study design, population characteristics, evaluation systems, adverse effects, and main outcomes. The reporting quality of the included studies was assessed based on the Cochrane Collaboration's tool for assessing the risk of bias in randomized trials and integrated together with studies that investigated the same subjects. The included studies that examined the improvement of nausea and vomiting in pregnancy, inflammation, metabolic syndromes, digestive function, and colorectal cancer's markers were consistently supported, whereas other expected functions were relatively controversial. Nevertheless, only 43 clinical trials (39.4%) met the criterion of having a 'high quality of evidence.' In addition to the quality assessment result, small populations and unstandardized evaluation systems were the observed shortcomings in ginger clinical trials. Further studies with adequate designs are warranted to validate the reported clinical functions of ginger.


Assuntos
Neoplasias Colorretais/tratamento farmacológico , Sistema Digestório/efeitos dos fármacos , Gengibre , Inflamação/tratamento farmacológico , Síndrome Metabólica/tratamento farmacológico , Náusea/tratamento farmacológico , Vômito/tratamento farmacológico , Feminino , Humanos , Náusea/etiologia , Fitoterapia , Extratos Vegetais/farmacologia , Extratos Vegetais/uso terapêutico , Gravidez , Complicações na Gravidez/tratamento farmacológico , Ensaios Clínicos Controlados Aleatórios como Assunto , Vômito/etiologia
8.
Nanotechnology ; 30(49): 495702, 2019 Dec 06.
Artigo em Inglês | MEDLINE | ID: mdl-31476746

RESUMO

We present an atmospheric-pressure plasma (APP) treatment technique to improve the electrical performance of solution-processed dielectric films. This technique can successfully reduce leakage current and frequency dependence of solution-processed dielectric films. The APP treatment contributes to the conversion of metal hydroxide to metal oxide, and in the case of a solution-treated AlO x dielectric thin film, it effectively ascribes to the formation of high-quality AlO x dielectric thin films. The capacitance of the untreated AlO x dielectric thin film varies up to 9.9% with frequency change, but the capacitance of the APP treated AlO x dielectric thin film varies within 1.5%. When the solution-processed InO x thin-film transistors (TFTs) were fabricated using these dielectric films, the field-effect mobility of TFTs with the APP-treated AlO x dielectric film was increased significantly from 9.77 to 26.79 cm2 V-1 s-1 in comparison to that of TFTs with the untreated AlO x dielectric film. We also have confirmed that these results are similar to the properties of the sample prepared at high annealing temperature including electrical performance, conduction mechanism and chemical structure. The APP treatment technique provides a new opportunity to effectively improve the electrical performance of solution-processed dielectrics in the atmosphere at low temperature.

9.
ACS Appl Mater Interfaces ; 11(4): 4103-4110, 2019 Jan 30.
Artigo em Inglês | MEDLINE | ID: mdl-30607933

RESUMO

Growing attention has been given to low temperature, solution-processed metal oxide thin-film transistors because they can be applied in the emerging sector of flexible and large-scale electronics. However, major obstacles of solution-grown devices, such as their relatively low field-effect mobility and the difficulty of controlling carrier concentration, limit the further advancement of the electronics. Here, we overcome these constraints through a newly renovated structure, called a "homojunction", consisting of double-stacked semiconductors with same material. The homojunction oxide thin-film transistor has remarkable electrical performance with controllability, for example, tunable turn-on voltage (-80 V to -8 V) and high average field-effect mobility (∼50 cm2/V·s) are obtained via a low annealing temperature process (250 °C). Furthermore, notable achievements associated with stability, reliability, and uniformity are verified. These results are attributed to the unique phenomena of solution-grown thin films: the change of both chemical and physical properties of thin films. Our findings highlight that the thin films of high quality can be yielded through the solution process at low annealing temperatures, and thus solution-grown transistors hold great promise for widespread industrial applications.

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