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Phys Chem Chem Phys ; 22(2): 914-918, 2020 Jan 02.
Artigo em Inglês | MEDLINE | ID: mdl-31845940


As a representative in-plane anisotropic two-dimensional (2D) material, germanium monoselenide (GeSe) has attracted considerable attention recently due to its various in-plane anisotropic material properties originating from the low symmetry of a puckered honeycomb structure. Although there have been plenty of reports on the in-plane anisotropic vibrational, electrical and optical properties of GeSe, the strain effect on those appealing anisotropies is still under exploration. Here we report a systematic first-principles computational investigation of strain-engineering of the anisotropic electronic properties of GeSe monolayers. We found that the anisotropic ratio of the effective mass and mobility of charge carriers (electrons and holes) of GeSe along two principle axes can be controlled by using simple strain conditions. Notably, the preferred conducting direction of GeSe can be even rotated by 90° under an appropriate uniaxial strain (>5%). Such effective strain modulation of the electronic anisotropy of GeSe monolayers provides them abundant opportunities for future mechanical-electronic devices.

J Am Chem Soc ; 141(45): 18075-18082, 2019 Nov 13.
Artigo em Inglês | MEDLINE | ID: mdl-31638806


Defect passivation using oxygen has been identified as an efficient and convenient approach to suppress nonradiative recombination and improve the photovoltaic performance of hybrid organic-inorganic halide perovskites (HHPs). However, oxygen can seriously undermine the chemical stability of HHPs due to the reaction of superoxide with protonated organic cations such as CH3NH3+ and [(NH2)2CH]+, thus hindering the deep understanding of how oxygen affects their defect properties. Here we substitute free-proton inorganic Cs+ for organic moiety to avoid the negative effect of oxygen and then systematically investigate the oxygen passivation mechanism in all-inorganic halide perovskites (IHPs) from theory to experiment. We find that, in contrast to conventional oxygen molecule passivation just through physisorption on the surface of perovskites, the oxygen atom can provide a better passivation effect due to its stronger interaction with perovskites. The key point to achieve O-passivated perovskites rather than O2 is the dry-air processing condition, which can dissociate the O2 into O during the annealing process. O-passivated IHP solar cells exhibit enhanced power conversion efficiency (PCE) and better air stability than O2-passivated cells. These results not only provide deep insights into the passivation effect of oxygen on perovskites but also demonstrate the great potential of IHPs for high photovoltaic performance with simplified ambient processing.

Adv Sci (Weinh) ; 6(5): 1801810, 2019 Mar 06.
Artigo em Inglês | MEDLINE | ID: mdl-30886804


Germanium diselenide (GeSe2) has recently emerged as a new member of in-plane anisotropic 2D materials, notable for its wide bandgap of 2.74 eV, excellent air stability, and high performance in polarization-sensitive photodetection. However, the interlayer interaction in GeSe2 has never been reported, which usually plays an important role in layer-number-dependent physical properties. Here, the interlayer coupling in GeSe2 is systematically investigated from theory to experiment. Unexpectedly, all of density functional theory (DFT) calculations about layer-dependent band structures, cleavage energy, binding energy, translation energy, and interlayer differential charge density demonstrate the much weaker interlayer interaction in GeSe2 when compared with black phosphorus (BP). Furthermore, both thickness-dependent and temperature-dependent Raman spectra of GeSe2 flakes, which exhibit no detectable changes of Raman peaks with the increase in thickness and a small first-order temperature coefficient of -0.0095 cm-1 K-1, respectively, experimentally confirm the weakly coupled layers in GeSe2. The results establish GeSe2 as an unusual member of in-plane anisotropic 2D materials with weak interlayer interaction.

Angew Chem Int Ed Engl ; 58(4): 1094-1099, 2019 Jan 21.
Artigo em Inglês | MEDLINE | ID: mdl-30447094


The uncontrolled growth of Li dendrites upon cycling might result in low coulombic efficiency and severe safety hazards. Herein, a lithiophilic binary lithium-aluminum alloy layer, which was generated through an in situ electrochemical process, was utilized to guide the uniform metallic Li nucleation and growth, free from the formation of dendrites. Moreover, the formed LiAl alloy layer can function as a Li reservoir to compensate the irreversible Li loss, enabling long-term stability. The protected Li electrode shows superior cycling over 1700 h in a Li|Li symmetric cell.

J Am Chem Soc ; 140(11): 4150-4156, 2018 03 21.
Artigo em Inglês | MEDLINE | ID: mdl-29494139


In-plane anisotropic layered materials such as black phosphorus (BP) have emerged as an important class of two-dimensional (2D) materials that bring a new dimension to the properties of 2D materials, hence providing a wide range of opportunities for developing conceptually new device applications. However, all of recently reported anisotropic 2D materials are relatively narrow-bandgap semiconductors (<2 eV), and there has been no report about this type of materials with wide bandgap, restricting the relevant applications such as polarization-sensitive photodetection in short wave region. Here we present a new member of the family, germanium diselenide (GeSe2) with a wide bandgap of 2.74 eV, and systematically investigate the in-plane anisotropic structural, vibrational, electrical, and optical properties from theory to experiment. Photodetectors based on GeSe2 exhibit a highly polarization-sensitive photoresponse in short wave region due to the optical absorption anisotropy induced by in-plane anisotropy in crystal structure. Furthermore, exfoliated GeSe2 flakes show an outstanding stability in ambient air which originates from the high activation energy of oxygen chemisorption on GeSe2 (2.12 eV) through our theoretical calculations, about three times higher than that of BP (0.71 eV). Such unique in-plane anisotropy and wide bandgap, together with high air stability, make GeSe2 a promising candidate for future 2D optoelectronic applications in short wave region.

J Am Chem Soc ; 139(2): 958-965, 2017 01 18.
Artigo em Inglês | MEDLINE | ID: mdl-27997209


GeSe has recently emerged as a promising photovoltaic absorber material due to its attractive optical and electrical properties as well as earth-abundant and low-toxic constituent elements. However, no photovoltaic device has been reported based on this material so far, which could be attributed to the inevitable coexistence of phase impurities Ge and GeSe2, leading to detrimental recombination-center defects and seriously degrading the device performance. Here we overcome this issue by introducing a simple and fast (4.8 µm min-1) rapid thermal sublimation (RTS) process designed according to the sublimation feature of the layered structured GeSe. This new method offers a compelling combination of assisting raw material purification to suppress deleterious phase impurities and preventing the formation of detrimental point defects through congruent sublimation of GeSe, thus providing an in situ self-regulated process to fabricate high quality polycrystalline GeSe films. Solar cells fabricated following this process show a power conversion efficiency of 1.48% with good stability. This preliminary efficiency and high stability, combined with the self-regulated RTS process (also extended to the fabrication of other binary IV-VI chalcogenide films, i.e., GeS), demonstrates the great potential of GeSe for thin-film photovoltaic applications.