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ACS Nano ; 14(7): 9059-9065, 2020 Jul 28.
Artigo em Inglês | MEDLINE | ID: mdl-32628444


Chalcogenide phase-change materials show strikingly contrasting optical and electrical properties, which has led to their extensive implementation in various memory devices. By performing spin-, time-, and angle-resolved photoemission spectroscopy combined with the first-principles calculation, we report the experimental results that the crystalline phase of GeSb2Te4 is topologically nontrivial in the vicinity of the Dirac semimetal phase. The resulting linearly dispersive bulk Dirac-like bands that cross the Fermi level and are thus responsible for conductivity in the stable crystalline phase of GeSb2Te4 can be viewed as a 3D analogue of graphene. Our finding provides us with the possibility of realizing inertia-free Dirac currents in phase-change materials.

Sci Rep ; 8(1): 9073, 2018 Jun 13.
Artigo em Inglês | MEDLINE | ID: mdl-29899419


Transient electron-hole pairs generated in semiconductors can exhibit unconventional excitonic condensation. Anisotropy in the carrier mass is considered as the key to elongate the life time of the pairs, and hence to stabilize the condensation. Here we employ time- and angle-resolved photoemission spectroscopy to explore the dynamics of photo-generated carriers in black phosphorus. The electronic structure above the Fermi level has been successfully observed, and a massive-and-anisotropic Dirac-type dispersions are confirmed; more importantly, we directly observe that the photo-carriers generated across the direct band gap have the life time exceeding 400 ps. Our finding confirms that black phosphorus is a suitable platform for excitonic condensations, and also open an avenue for future applications in broadband mid-infrared BP-based optoelectronic devices.

Nat Commun ; 6: 8913, 2015 Nov 19.
Artigo em Inglês | MEDLINE | ID: mdl-26582485


Magnetically doped topological insulators, possessing an energy gap created at the Dirac point through time-reversal-symmetry breaking, are predicted to exhibit exotic phenomena including the quantized anomalous Hall effect and a dissipationless transport, which facilitate the development of low-power-consumption devices using electron spins. Although several candidates of magnetically doped topological insulators were demonstrated to show long-range magnetic order, the realization of the quantized anomalous Hall effect is so far restricted to the Cr-doped (Sb,Bi)2Te3 system at extremely low temperature; however, the microscopic origin of its ferromagnetism is poorly understood. Here we present an element-resolved study for Cr-doped (Sb,Bi)2Te3 using X-ray magnetic circular dichroism to unambiguously show that the long-range magnetic order is mediated by the p-hole carriers of the host lattice, and the interaction between the Sb(Te) p and Cr d states is crucial. Our results are important for material engineering in realizing the quantized anomalous Hall effect at higher temperatures.