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1.
ACS Appl Mater Interfaces ; 12(23): 26258-26266, 2020 Jun 10.
Artigo em Inglês | MEDLINE | ID: mdl-32432467

RESUMO

The neural system is a multifunctional perceptual learning system. Our brain can perceive different kinds of information to form senses, including touch, sight, hearing, and so on. Mimicking such perceptual learning systems is critical for neuromorphic platform applications. Here, an artificial tactile perceptual neuron is realized by utilizing electronic skins (E-skin) with oxide neuromorphic transistors, and this artificial tactile perceptual neuron successfully simulates biological tactile afferent nerves. First, the E-skin device is constructed using microstructured polydimethylsiloxane membranes coated with Ag/indium tin oxide (ITO) layers, exhibiting good sensitivities of ∼2.1 kPa-1 and fast response time of tens of milliseconds. Then, the chitosan-based electrolyte-gated ITO neuromorphic transistor is fabricated and exhibits high performance and synaptic responses. Finally, the integrated artificial tactile perceptual neuron demonstrates pressure excitatory postsynaptic current and paired-pulse facilitation. The artificial tactile perceptual neuron is featured with low energy consumption as low as ∼0.7 nJ. Moreover, it can mimic acute and chronic pain and nociceptive characteristics of allodynia and hyperalgesia in biological nociceptors. Interestingly, the artificial tactile perceptual neuron can employ "Morse code" pressure-interpreting scheme. This simple and low-cost approach has excellent potential for applications including but not limited to intelligent humanoid robots and replacement neuroprosthetics.

2.
ACS Appl Mater Interfaces ; 12(6): 7833-7839, 2020 Feb 12.
Artigo em Inglês | MEDLINE | ID: mdl-31961648

RESUMO

Recently, neuromorphic devices have been receiving increasing interest in the field of artificial intelligence (AI). Realization of fundamental synaptic plasticities on hard-ware devices would endow new intensions for neuromorphic devices. Spike-rate-dependent plasticity (SRDP) is one of the most important synaptic learning mechanisms in brain cognitive behaviors. It is thus interesting to mimic the SRDP behaviors on solid-state neuromorphic devices. In the present work, nanogranular phosphorus silicate glass (PSG)-based proton conductive electrolyte-gated oxide neuromorphic transistors have been proposed. The oxide neuromorphic transistors have good transistor performances and frequency-dependent synaptic plasticity behavior. Moreover, the neuromorphic transistor exhibits SRDP activities. Interestingly, by introducing priming synaptic stimuli, the modulation of threshold frequency value distinguishing synaptic potentiation from synaptic depression is realized for the first time on an electrolyte-gated neuromorphic transistor. Such a mechanism can be well understood with interfacial proton gating effects of the nanogranular PSG-based electrolyte. Furthermore, the effects of SRDP learning rules on pattern learning and memory behaviors have been conceptually demonstrated. The proposed neuromorphic transistors have potential applications in neuromorphic engineering.

3.
ACS Appl Mater Interfaces ; 11(31): 28352-28358, 2019 Aug 07.
Artigo em Inglês | MEDLINE | ID: mdl-31291719

RESUMO

Neuromorphic devices and systems with ultralow power consumption are important in building artificial intelligent systems. Here, indium tin oxide (ITO)-based oxide neuromorphic transistors are fabricated using poly(vinyl alcohol) (PVA)-based proton-conducting electrolytes as gate dielectrics. The electrical performances of the transistors can be modulated with the ITO channel thickness. Fundamental synaptic functions, including excitatory postsynaptic current, paired-pulse facilitation, and multistore memory, are successfully emulated. Most importantly, the PVA-gated neuromorphic devices demonstrate ultralow energy consumption of ∼1.16 fJ with ultrahigh sensitivity of ∼5.4 dB, as is very important for neuromorphic engineering applications. Because of the inherent environmental-friendly characteristics of PVA, the devices possess security biocompatibility. Thus, the proposed PVA-gated oxide neuromorphic transistors may find potential applications in "green" ultrasensitive neuromorphic systems and efficient electronic biological interfaces.

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