Layered van der Waals Chalcogenides FeAl2Se4, MnAl2S4, and MnAl2Se4: Atomically Thin Triangular Arrangement of Transition-Metal Atoms.

Layered van der Waals (vdW) chalcogenides of 3d transition metals are a rich source of two-dimensional (2D) nanomaterials, in which atomically thin layers with the terminating chalcogen atoms exhibit promising functionality for novel spintronic devices. Here, we report on the synthesis, crystal growth, and magnetic properties of FeAl2Se4, MnAl2S4, and MnAl2Se4 ternary chalcogenides. Crystal structures are probed by powder X-ray diffraction, Mössbauer spectroscopy, and high-resolution transmission electron microscopy. We improve the structural models of FeAl2Se4 and MnAl2S4 and show that isostructural MnAl2S4 and MnAl2Se4 crystallize in the centrosymmetric R3̅̅m space group. In the crystal structure, transition metal and Al atoms mutually occupy the octahedral and tetrahedral voids of four close-packing chalcogen layers terminated by vdW gaps. The transition-metal atoms form a triangular arrangement inside the close-packing layers. As a result, FeAl2Se4 and MnAl2S4 show no long-range magnetic order in the studied temperature range. In the paramagnetic state, Fe and Mn possess effective magnetic moments of 4.99(2) and 5.405(6) µB, respectively. Furthermore, FeAl2Se4 enters a frozen spin-disordered state below 12 K.

Cleavable crystals, crystal structure, and magnetic properties of the NbFe1+xTe3 layered van der Waals telluride.

Transition metal-based two-dimensional nanomaterials with competing magnetic states are at the cutting edge of spintronic and low-power memory devices. In this paper, we present a Fe-rich NbFe1+xTe3 layered telluride (x ≈ 0.5), which shows an interplay of spin-glass and antiferromagnetic states below the Néel temperature of 179 K. The compound has a layered crystal structure, where the NbFeTe3 layers are terminated by the Te atoms and van der Waals gaps. Bulk single crystals grown by chemical vapor transport reactions possess the (1̄01) cleavage plane suitable for the exfoliation of two-dimensional nanomaterials. Combination of high-resolution transmission electron microscopy and powder X-ray diffraction reveals the zigzag ladders of Fe atoms inside the structural layers, as well as complementary zigzag chains of the partially occupied Fe positions in the interstitial region. Fe atoms carry large effective magnetic moment of 4.85(3)µB per atom in the paramagnetic state yielding intriguing magnetic properties of NbFe1+xTe3. They include frozen spin-glass state at low temperatures and spin-flop transition in high magnetic fields indicating promising flexibility of the magnetic system and its potential control by magnetic field or gate tuning in the spintronic devices and heterostructures.

Synthesis, Crystal, and Electronic Structure of (HpipeH2)2[Sb2I10](I2), with I2 Molecules Linking Sb2X10 Dimers into a Polymeric Anion: A Strategy for Optimizing a Hybrid Compound's Band Gap.

In searching for a tool for optimizing the band gap of a hybrid compound capable of serving as a light-harvesting material in lead-free photovoltaics, we synthesized a new polyiodoantimonate (HpipeH2)2[Sb2I10](I2) and analyzed its crystal and electronic structure by application of X-ray crystal structure analysis, Raman and diffuse reflectance spectroscopies, and quantum chemical calculations. It was demonstrated that I2 molecules link Sb2I10 edge-sharing octahedra into zig-zag chains, whereas the organic cations link inorganic anionic chains into a 3D structure featuring a complex pattern of covalent bonds and non-covalent interactions. Overall, these features provide the background for forming the electronic structure with a narrow band gap of 1.41 eV, therefore being a versatile tool for optimizing the band gap of a potential light-harvesting hybrid compound.

Controlled Reduction of Sn4+ in the Complex Iodide Cs2SnI6 with Metallic Gallium.

Metal gallium as a low-melting solid was applied in a mixture with elemental iodine to substitute tin(IV) in a promising light-harvesting phase of Cs2SnI6 by a reactive sintering method. The reducing power of gallium was applied to influence the optoelectronic properties of the Cs2SnI6 phase via partial reduction of tin(IV) and, very likely, substitute partially Sn4+ by Ga3+. The reduction of Sn4+ to Sn2+ in the Cs2SnI6 phase contributes to the switching from p-type conductivity to n-type, thereby improving the total concentration and mobility of negative-charge carriers. The phase composition of the samples obtained was studied by X-ray diffraction (XRD) and 119Sn Mössbauer spectroscopy (MS). It is shown that the excess of metal gallium in a reaction melt leads to the two-phase product containing Cs2SnI6 with Sn4+ and ß-CsSnI3 with Sn2+. UV-visible absorption spectroscopy shows a high absorption coefficient of the composite material.

Effect of antifluorite layer on the magnetic order in Eu-based 1111 compounds, EuTAsF (T = Zn, Mn, and Fe).

The 1111 compounds with an alternating sequence of fluorite and antifluorite layers serve as structural hosts for the vast family of Fe-based superconductors. Here, we use neutron powder diffraction and density-functional-theory (DFT) band-structure calculations to study magnetic order of Eu2+ in the [EuF]+ fluorite layers depending on the nature of the [TAs]- antifluorite layer that can be non-magnetic semiconducting (T = Zn), magnetic semiconducting (T = Mn), or magnetic metallic (T = Fe). Antiferromagnetic transitions at TN ∼ 2.4-3 K due to an ordering of the Eu2+ magnetic moments were confirmed in all three EuTAsF compounds. Whereas in EuTAsF (T = Zn and Mn), the commensurate k1 = (½ ½ 0) stripe order pattern with magnetic moments within the a-b plane is observed, the order in EuFeAsF is incommensurate with k = (0 0.961(1) ½) and represents a cycloid of Eu2+ magnetic moments confined within the bc-plane. Additionally, the Mn2+ sublattice in EuMnAsF features a robust G-type antiferromagnetic order that persists at least up to room temperature, with magnetic moments along the c-direction. Although DFT calculations suggest stripe antiferromagnetic order in the Fe-sublattice of EuFeAsF as the ground state, neutron diffraction reveals no evidence of long-range magnetic order associated with Fe. We show that the frustrating interplane interaction J3 between the adjacent [EuF]+ layers is comparable with in-plane J1-J2 interactions already in the case of semiconducting fluorite layers [TAs]- (T = Zn and Mn) and becomes dominant in the case of the metallic [FeAs]- ones. The latter, along with a slight orthorhombic distortion, is proposed to be the origin of the incommensurate magnetic structure observed in EuFeAsF.

Fe-Rich Ferromagnetic Cleavable Van der Waals Telluride Fe5AsTe2.

Transition metal-based layered compounds with van der Waals gaps between the structural layers are a rich source of magnetic materials for spintronic applications. Bulk crystals can be cleaved, providing high-quality two-dimensional nanomaterials, which are promising for the manipulation of spins in spintronic devices and low power quantum logic interfaces. The layered van der Waals telluride Fe5AsTe2 can be synthesized by the high-temperature reaction of elements. In the crystal structure, Fe-rich structural layers with the composition of Fe4.58(4)AsTe2 are separated by the van der Waals gaps with no atoms in the interstitial region. Crystal growth employing chemical vapor transport reactions yields bulk cleavable crystals, which exhibit weak inherent ferromagnetism below the Curie temperature of TC = 48 K. In the ordered state, the magnetization shows a dual-slope behavior in low magnetic fields, indicating the compensated or canted nature of magnetism. Magnetic susceptibility and magnetization measurements reveal perpendicular magnetic anisotropy. The large Rhodes-Wohlfarth ratio of 4.6 indicates the itinerant nature of ferromagnetism in Fe5AsTe2.

Ferromagnetic correlations in the layered van der Waals sulfide FeAl2S4.

Transition metal-based layered compounds with van der Waals gaps between the adjacent layers are a source of two-dimensional (2D) nanomaterials with nontrivial transport and magnetic properties. 2D ferromagnets, both metals and semiconductors, can be leveraged to produce spin-polarized current in spintronic devices with tailored functionalities. Here, we report on the synthesis, crystal growth, crystal and electronic structure, and magnetic properties of the Fe-based FeAl2S4 layered sulfide. In the crystal structure, Fe and Al atoms mix on octahedral and tetrahedral sites between hexagonal layers of S atoms, which are terminated by the van der Waals gaps. Band structure calculations reveal strong electronic correlations within the semiconducting ground state, which induce ferromagnetism with the magnetic moment of 0.12µB per formula unit for a Hubbard interaction U = 5 eV and Hund's rule coupling J = 0.8 eV. Crystal growth employing chemical vapor transport reactions results in bulk cleavable crystals, which show paramagnetic Curie-Weiss behavior at high temperatures with the Fe2+ magnetic centers. At low temperatures, an anomaly is observed on the magnetic susceptibility curve, below which the magnetization shows ferromagnetic hysteresis, indicating the presence of ferromagnetic correlations in FeAl2S4.

Intermetallic Compound Re2Ga9Ge with Re- and Ge-Embedded Gallium Clusters: Synthesis, Crystal Structure, Chemical Bonding, and Physical Properties.

Transition metal-based endohedral cluster intermetallic compounds are interesting electron phases, which frequently exhibit superconductivity with a peculiar interplay between the critical temperature and valence electron count. We present a new Re-based endohedral gallium cluster compound, Re2Ga9Ge. Its unique crystal structure (P42/mmc space group, a = 8.0452(3) Å, c = 6.7132(2) Å) is built by two types of gallium polyhedra: monocapped Archimedean antiprisms centered by rhenium atoms and tetrahedra containing a main-group element inside. The analysis of chemical bonding shows the presence of localized pairwise interactions between the p-block elements and the formation of multicenter bonds with the participation of d-orbitals of rhenium. In the electronic band structure, the Fermi level is located in a narrow pseudogap indicating the optimum band filling and thus explaining the virtual absence of a homogeneity range. The compound exhibits Pauli paramagnetism and metallic properties with unexpectedly low thermal conductivity. A sharp anomaly observed on the magnetic susceptibility and resistivity curves presumably indicates the electronic phase transition accompanied by charge ordering at the characteristic temperature of T * = 271 K in zero magnetic field.

Endohedral cluster intermetallic superconductors: at the frontier between chemistry and physics.

When a transition metal combines with an excess of a p-metal, the latter forms endohedral clusters with the number of vertices up to 14. These clusters are the building units of endohedral cluster intermetallic compounds. Although discovered a few decades ago, they have gained renewed interest due to their peculiar crystal and electronic structures and frequently observed superconducting properties. Advances over recent years reveal that endohedral cluster architectures are flexible enough, enabling chemical substitutions and the formation of a series of structurally related phases, where the same clusters can be arranged in different ways. Within the structural series, the superconducting-state parameters, including critical temperature and magnetic field, can be controlled and finely tuned. Herein, we present the most recent results in the chemical properties and superconductivity of endohedral cluster intermetallics and provide an outlook for the field.

Intermetallic Fe6Ge5 formation and decay of a core-shell structure during the oxygen evolution reaction.

Herein, we report on intermetallic iron germanide (Fe6Ge5) as a novel oxygen evolution reaction (OER) precatalyst with a Tafel slope of 32 mV dec-1 and an overpotential of 272 mV at 100 mA cm-2 in alkaline media. Furthermore, we uncover the in situ formation of a core-shell like structure that slowly collapses under OER conditions.

Molecular and Supramolecular Structures of Triiodides and Polyiodobismuthates of Phenylenediammonium and Its N,N-dimethyl Derivative.

Despite remarkable progress in photoconversion efficiency, the toxicity of lead-based hybrid perovskites remains an important issue hindering their applications in consumer optoelectronic devices, such as solar cells, LED displays, and photodetectors. For that reason, lead-free metal halide complexes have attracted great attention as alternative optoelectronic materials. In this work, we demonstrate that reactions of two aromatic diamines with iodine in hydroiodic acid produced phenylenediammonium (PDA) and N,N-dimethyl-phenylenediammonium (DMPDA) triiodides, PDA(I3)2⋅2H2O and DMPDA(I3)I, respectively. If the source of bismuth was added, they were converted into previously reported PDA(BiI4)2⋅I2 and new (DMPDA)2(BiI6)(I3)⋅2H2O, having band gaps of 1.45 and 1.7 eV, respectively, which are in the optimal range for efficient solar light absorbers. All four compounds presented organic-inorganic hybrids, whose supramolecular structures were based on a variety of intermolecular forces, including (N)H⋅⋅⋅I and (N)H⋅⋅⋅O hydrogen bonds as well as I⋅⋅⋅I secondary and weak interactions. Details of their molecular and supramolecular structures are discussed based on single-crystal X-ray diffraction data, thermal analysis, and Raman and optical spectroscopy.

Indium Doping of Lead-Free Perovskite Cs2SnI6.

Structure and properties of an inorganic perovskite Cs2SnI6 demonstrated its potential as a light-harvester or electron-hole transport material; however, its optoelectronic properties are poorer than those of lead-based perovskites. Here, we report the way of light tuning of absorption and transport properties of cesium iodostannate(IV) Cs2SnI6 via partial heterovalent substitution of tin for indium. Light absorption and optical bandgaps of materials have been investigated by UV-vis absorption and photoluminescent spectroscopies. Low-temperature electron paramagnetic resonance spectroscopy was used to study the kind of paramagnetic centers in materials.

Electron-Precise Semiconducting ReGa2Ge: Extending the IrIn3 Structure Type to Group 7 of the Periodic Table.

Intermetallic compounds with semiconducting properties are rare, but they give rise to advanced materials for energy conversion and saving applications. Here, we present ReGa2Ge, a new electron-precise narrow-gap intermetallic semiconductor. The compound crystallizes in the IrIn3 structure type (space group P42/mnm, a = 6.5734(3) Å, c = 6.7450(8) Å, and Z = 4), where Re atoms occupy the Ir site, while Ga and Ge jointly populate the In sites. 69,71Ga nuclear quadrupole resonance spectroscopy indicates nonstatistical partially ordered distribution of Ga and Ge over two available crystallographic sites; however, the Ga:Ge ratio is exactly 2:1 without noticeable homogeneity range. The stoichiometry of ReGa2Ge ensures its precise valence electron count, which is 17 e- per formula unit. Accordingly, a narrow energy gap opens up at the Fermi energy in the electronic structure. Electrical resistivity, Seebeck coefficient, and thermal conductivity are in agreement with the semiconducting behavior deduced from the electronic structure calculations and point to prospective thermoelectric properties at high temperatures. Bonding analysis reveals dominant covalency in Re-E (E = Ga, Ge) and Re-Re interactions.

Assembling Polyiodides and Iodobismuthates Using a Template Effect of a Cyclic Diammonium Cation and Formation of a Low-Gap Hybrid Iodobismuthate with High Thermal Stability.

Exploiting a template effect of 1,4-diazacycloheptane (also known as homopiperazine, Hpipe), four new hybrid iodides, (HpipeH2)2Bi2I10·2H2O, (HpipeH2)I(I3), (HpipeH2)3I6·H2O, and (HpipeH2)3(H3O)I7, were prepared and their crystal structures were solved using single crystal X-ray diffraction data. All four solid-state crystal structures feature the HpipeH22+ cation alternating with Bi2I104-, I3-, or I- anions and solvent water or H3O+ cation. HpipeH22+ assembles anionic and neutral building blocks into polymer structures by forming four strong (N)H···I and (N)H···O hydrogen bonds per cation, with the H···I distances ranging from 2.44 to 2.93 Å and H···O distances of 1.88-1.89 Å. These hydrogen bonds strongly affect the properties of compounds; in particular, in the case of (HpipeH2)2Bi2I10·2H2O, they ensure narrowing of the band gap down to 1.8 eV and provide high thermal stability up to 240 °C, remarkable for a hydrated molecular solid.

Synthesis, crystal and electronic structures of Pt-rich phosphides EuPt3P and EuPt6P2.

Two new ternary Pt-rich phosphides, EuPt6P2 and EuPt3P, have been prepared via a two-step solid state reaction. Their crystal structures have been determined from powder XRD data. EuPt6P2 is isostructural to SrPt6P2 (cubic, Pa3[combining macron], a = 8.4603(1) Å); its crystal structure comprises corner-sharing Pt6P trigonal prisms hosting Eu2+ cations in the cuboctahedral voids of the framework. EuPt3P is isostructural to the SrPt3P anti-perovskite (P4/nmm, a = 5.7452(1) Å and c = 5.4212(1) Å). Magnetization measurements reveal the magnetic response caused by the Eu2+(4f7) cations. EuPt6P2 is paramagnetic exhibiting no phase transitions down to 1.8 K, whereas EuPt3P orders ferromagnetically below 19 K. Similar to SrPt6P2 and SrPt3P, the new compounds are metallic with states near the Fermi level predominantly formed by the 5d orbitals of Pt.

Endohedral Cluster Superconductors in the Mo-Ga-Sn System Explored by the Joint Flux Technique.

Endohedral Ga cluster compounds feature nontrivial superconducting states including the two-gap superconductivity similar in nature to MgB2. We use the joint flux synthetic technique to introduce Sn into the Ga matrix and tune the valence electron count in the two new endohedral cluster superconductors Mo8Ga41-xSnx and Mo4Ga21-x-δSnx with critical temperatures of Tc = 8.7 and 5.85 K, respectively. While the former compound is a derivative of the previously known Mo8Ga41 superconductor, where Sn atoms are enclosed inside the Sn@Ga6 octahedral clusters, the latter is a new architecture built upon Mo@Ga9Sn clusters, Ga@Ga12 cuboctahedra, and Sn4 squares. We show that this novel Mo4Ga21-x-δSnx superconductor features strong electron-phonon coupling with the large ratio of 2Δ(0)/(kBTc) = 4.1 similar to that of the Mo8Ga41 superconductor with the closely related crystal structure.

Boosting Water Oxidation through In Situ Electroconversion of Manganese Gallide: An Intermetallic Precursor Approach.

For the first time, the manganese gallide (MnGa4 ) served as an intermetallic precursor, which upon in situ electroconversion in alkaline media produced high-performance and long-term-stable MnOx -based electrocatalysts for water oxidation. Unexpectedly, its electrocorrosion (with the concomitant loss of Ga) leads simultaneously to three crystalline types of MnOx minerals with distinct structures and induced defects: birnessite δ-MnO2 , feitknechtite ß-MnOOH, and hausmannite α-Mn3 O4 . The abundance and intrinsic stabilization of MnIII /MnIV active sites in the three MnOx phases explains the superior efficiency and durability of the system for electrocatalytic water oxidation. After electrophoretic deposition of the MnGa4 precursor on conductive nickel foam (NF), a low overpotential of 291 mV, comparable to that of precious-metal-based catalysts, could be achieved at a current density of 10 mA cm-2 with a durability of more than five days.

Single-gap superconductivity in Mo8Ga41.

In this paper, the potential existence of two-gap superconductivity in Mo8Ga41 is addressed in detail by means of thermodynamic and spectroscopic measurements. A combination of highly sensitive bulk and surface probes, specifically ac-calorimetry and scanning tunneling spectroscopy (STS), are utilized on the same piece of crystal and reveal the presence of only one intrinsic gap in the system featuring strong electron-phonon coupling. Minute traces of additional superconducting phases detected by STS and also in the heat capacity measured in high magnetic fields on a high-quality and seemingly single-phase crystal might mimic the multigap superconductivity of Mo8Ga41 suggested recently in several studies.

From endohedral cluster superconductors to approximant phases: synthesis, crystal and electronic structure, and physical properties of Mo8Ga41-xZnx and Mo7Ga52-xZnx.

Using the crystal-growth joint flux technique based on the combination of two aliovalent low-melt metals, gallium and zinc, we adjust the gross valence electron count in the Mo-Ga-Zn system and produce the Mo8Ga41-xZnx and Mo7Ga52-xZnx intermetallic compounds. Gradual reduction in the valence electron count first leads to the Zn for Ga substitution in the Mo8Ga41 endohedral cluster superconductor, accompanied by the formation of Zn-containing clusters in the crystal structure and by the gradual suppression of superconductivity. Mo8Ga41-xZnx with x = 7.2(2) exhibits superconducting properties below TC = 4 K, whereas there is no superconducting transition at temperatures above 2 K for the limiting composition of x = 11.3(2). Further, the Mo7Ga52-xZnx phase is formed from the flux with a higher content of Zn. Mo7Ga52-xZnx crystallizes in the Mo7Sn12Zn40 structure type with a narrow homogeneity range and exhibits metallic behavior with no sign of superconductivity down to at least 1.8 K. Its experimental valence electron count of 2.9 e per atom is below that of endohedral gallium cluster superconductors. Electronic structures of Mo8Ga41-xZnx and Mo7Ga52-xZnx feature the opening of a pseudogap slightly below the Fermi level indicating the specific stability of these structure types at the valence electron count of 3.2 e per atom and 2.7 e per atom, respectively.

ReGaGe2: an intermetallic compound with semiconducting properties and localized bonding.

ReGaGe2 is a new member of the family of intermetallic compounds with non-metallic properties. It displays highly localized covalent bonding patterns. Its electronic structure is governed by mixing of Re d orbitals with the s and p orbitals of Ga and Ge and features the Fermi level falling into the opened band gap, ensuring experimentally confirmed semiconducting properties.