Bridge-dependent donor-metal-acceptor-metal-donor (D-M-A-M-D) systems: from charge transfer to electron transfer in dioxolene-Ge-diimine complexes.

Synthesis and structural characterization of a family of germanium-dioxolene complexes with ditopic N-donor ligands (L1-L5) (L1 = 1,2-bis(pyridin-2-ylmethylene)hydrazine L2 = 1,6-bis-(pyridin-2-yl)-2,5-diaza-1,5-heхаdiene, L3 = N,N-bis(pyridin-2-ylmethylene)-1,4-benzenediamine, L4 = N,N-bis(pyridin-2-ylmethylene)-(biphenyl)-4,4-diamine, L5 = 2,2'-azopyridine) is reported. The reaction of germanium bis-catecholate with bridging ligands L1 - L4, differing by the nature of the linker between pyridine sites gives rise to dinuclear digermanium complexes (36Cat2Ge)2L1-4 (36Cat = dianion of 3,6-di-tert-butylcatechol) 1-4 of DMAMD type (donor-metal-acceptor-metal-donor) with a charge transfer in the UV-Vis region. In opposite, the interaction of the 36Cat2Ge with 2,2'-azopyridine (L5) results in the two-electron transfer from the donor 36Cat2- ligands to the azopyridine bridge forming stable open-shell complex 5 [(36SQ)(36CatGe)]2(L5)2- (36SQ = radical-anionic semiquinonate ligand). Molecular structures of compounds 3 and 5 were determined by single crystal X-ray diffraction analysis. Electronic structures of complexes 1-5 were studied by means of DFT calculations.

Optical Properties of Graphene Nanoplatelets on Amorphous Germanium Substrates.

In this work, the integration of graphene nanoplatelets (GNPs) with amorphous germanium (Ge) substrates is explored. The optical properties were characterized using Variable-Angle Spectroscopic Ellipsometry (VASE). The findings of this study reveal a strong interaction between GNPs and amorphous germanium, indicated by a significant optical absorption. This interaction suggests a change in the electronic structure of the GNPs, implying that amorphous germanium could enhance their effectiveness in devices such as optical sensors, photodetectors, and solar cells. Herein, the use of amorphous germanium as a substrate for GNPs, which notably increases their refractive index and extinction coefficient, is introduced for the first time. By exploring this unique material combination, this study provides new insights into the interaction between GNPs and amorphous substrates, paving the way for the develop of high-performance, scalable optoelectronic devices with enhanced efficiency.

Atomistic Compositional Details and Their Importance for Spin Qubits in Isotope-Purified Silicon Quantum Wells.

Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope concentration depth profiles in a SiGe/28Si/SiGe heterostructure are analyzed with atom probe tomography (APT) and time-of-flight secondary-ion mass spectrometry down to their respective limits of isotope concentrations and depth resolution. Spin-echo dephasing times T 2 echo = 128 µ s $T_2^\mathbf {echo}=128 \,\umu\mathrm{s}$ and valley energy splittings EVS around 200 µ e V $200 \,\umu\mathrm{e\mathrm{V}}$ have been observed for single spin qubits in this quantum well (QW) heterostructure, pointing toward the suppression of qubit decoherence through hyperfine interaction with crystal host nuclear spins or via scattering between valley states. The concentration of nuclear spin-carrying 29Si is 50 ± 20ppm in the 28Si QW. The resolution limits of APT allow to uncover that both the SiGe/28Si and the 28Si/SiGe interfaces of the QW are shaped by epitaxial growth front segregation signatures on a few monolayer scale. A subsequent thermal treatment, representative of the thermal budget experienced by the heterostructure during qubit device processing, broadens the top SiGe/28Si QW interface by about two monolayers, while the width of the bottom 28Si/SiGe interface remains unchanged. Using a tight-binding model including SiGe alloy disorder, these experimental results suggest that the combination of the slightly thermally broadened top interface and of a minimal Ge concentration of 0.3 $0.3$ % in the QW, resulting from segregation, is instrumental for the observed large E VS = 200 µ e V $E_\mathrm{VS}=200 \,\umu\mathrm{e\mathrm{V}}$ . Minimal Ge additions <1%, which get more likely in thin QWs, will hence support high EVS without compromising coherence times. At the same time, taking thermal treatments during device processing as well as the occurrence of crystal growth characteristics into account seems important for the design of reproducible qubit properties.

High-Performance Visible-to-SWIR Photodetector Based on the Layered WS2 Heterojunction with Light-Trapping Pyramidal Black Germanium.

This study presents a layered transition metal dichalcogenide/black germanium (b-Ge) heterojunction photodetector that exhibits superior performance across a broad spectrum of wavelengths spanning from visible (vis) to shortwave infrared (SWIR). The photodetector includes a thin layer of b-Ge, which is created by wet etching of germanium (Ge) wafer to form submicrometer pyramidal structures. On top of this b-Ge layer, the WS2 thin film is deposited using pulsed laser deposition. In comparison to conventional germanium, b-Ge absorbs about 25% more light between 850 and 1750 nm wavelengths. The WS2/b-Ge photodetector has a peak photoresponsivity of 0.65 A/W, which is more than twice the photoresponsivity of the WS2/Ge photodetector at 1540 nm. Additionally, it shows better responsivity and response speed compared with other similar state-of-the-art photodetectors. Such an improvement in the performance of the device is credited to the light-trapping effect enabled by the germanium pyramids. Theoretical simulations employing the finite-difference time-domain technique help validate the concept. This novel photodetector holds promise for efficient detection of light across the vis to SWIR spectrum.

Cobalt germanium hydroxides with asymmetric electron distribution and surface hydroxyl groups for superb catalytic degradation performances.

Peroxymonosulfate (PMS)-based advanced oxidation processes (AOPs) are attractive approaches for solving the global problem of water pollution, due to the generation of highly-active reactive oxygen species (ROS). Therefore, highly-efficient PMS activation is crucial for promoting the catalytic degradation of environmental pollutants. Here, bimetallic CoGeO2(OH)2 nanosheets with abundant surface hydroxyl groups (CGH) were synthesized via a simple hydrothermal route for PMS activation and degradation of various organic contaminants for the first time. The abundant surface hydroxyl groups (≡Co-OH/≡Ge-OH) could promptly initiate PMS to generate highly-active species: singlet oxygen (1O2), sulfate radicals (SO4·-) and hydroxyl radicals (HO•), while the asymmetric electron distribution among Co-O-Ge bonds derived from the higher electronegativity of Ge than Co further enhances the quick electron transfer to promote the redox cycle of Co2+/Co3+ and Ge2+/Ge4+, thereby achieving an outstanding catalytic capability. The optimal catalyst exhibits nearly 100 % catalytic degradation performance of dyes (Methylene blue, Rhodamine B, Methyl orange, Orange II, Methyl green) and antibiotics (Norfloxacin, Bisphenol A, Tetracycline) over a wide pH range of 3-11 and under different coexisting anion conditions (Cl-, HCO3-, NO3-, HA), suggesting the excellent adaptability for practical usage. This study could potentially lead to novel perspectives on the remediation of water areas such as groundwater and deep-water areas.

Controllable preparation of carbon coating Ge nanospheres with a cubic hollow structure for high-performance lithium ion batteries.

Germanium based nanomaterials are very promising as the anodes for the lithium ion batteries since their large specific capacity, excellent lithium diffusivity and high conductivity. However, their controllable preparation is still very difficult to achieve. Herein, we facilely prepare a unique carbon coating Ge nanospheres with a cubic hollow structure (Ge@C) via a hydrothermal synthesis and subsequent pyrolysis using low-cost GeO2 as precursors. The hollow Ge@C nanostructure not only provides abundant interior space to alleviate the huge volumetric expansion of Ge upon lithiation, but also facilitates the transmission of lithium ions and electrons. Moreover, experiment analyses and density functional theory (DFT) calculations unveil the excellent lithium adsorption ability, high exchange current density, low activation energy for lithium diffusion of the hollow Ge@C electrode, thus exhibiting significant lithium storage advantages with a large charge capacity (1483 mAh/g under 200 mA g-1), distinguished rate ability (710 mAh/g under 8000 mA g-1) as well as long-term cycling stability (1130 mAh/g after 900 cycles under 1000 mA g-1). Therefore, this work offers new paths for controllable synthesis and fabrication of high-performance Ge based lithium storage nanomaterials.

Synthesis, Structures, and Reactivity of Organostannanides and Organogermanides of Copper(I).

Organogermane and organostannane compounds are valuable reagents in cross coupling reactions, and copper(I) germanide and stannanide complexes can provide convenient access to these compounds. This review presents the chemistry of copper(I) germanide and stannanide complexes, with a particular focus on systems at the frontier of organic and inorganic chemistry where structural characterisation of coordination complexes facilitates rationalisation of organic mechanisms. These species show both similarities to, and significant divergences from their lighter silanide congeners. For example, they are all viable sources of the relevant organotetranide anion, but in the cases of both germanium and tin, the tetranides can be accessed via direct deprotonation of the corresponding tetranes, a reaction unknown for silicon. Further divergences between copper(I) germanides and stannanides are highlighted; whilst both can be used in productive organic transformations to access organotetranes, catalytic reactions are only reported for germanium. The rather striking ability of triphenlstannides to acts as sources of the phenyl anion are discussed; the mechanism of this reaction is still subject to discussion, but its absence in the chemistry of germanium and silicon is now well-rationalised. We conclude this review by considering potential research directions in the synthesis and exploitation of copper(I) germanides and stannanides.

Traceable Optical Physical Unclonable Functions Based on Germanium Vacancy in Diamonds.

Physical unclonable functions (PUFs) have emerged as an unprecedented solution for modern information security and anticounterfeiting by virtue of their inherent unclonable nature derived from distinctive, randomly generated physical patterns that defy replication. However, the creation of traceable optical PUF tags remains a formidable challenge. Here, we demonstrate a traceable PUF system whose unclonability arises from the random distribution of diamonds and the random intensity of the narrow emission from germanium vacancies (GeV) within the diamonds. Tamper-resistant PUF labels can be manufactured on diverse and intricate structural surfaces by blending diamond particles into polydimethylsiloxane (PDMS) and strategically depositing them onto the surface of objects. The resulting PUF codes exhibit essentially perfect uniformity, uniqueness, reproducibility, and substantial encoding capacity, making them applicable as a private key to fulfill the customization demands of circulating commodities. Through integration of a digitized "challenge-response" protocol, a traceable and highly secure PUF system can be established, which is seamlessly compatible with contemporary digital information technology. Thus, the GeV-PUF system holds significant promise for applications in data security and blockchain anticounterfeiting, providing robust and adaptive solutions to address the dynamic demands of these domains.

Synthesis, Structure, Electrochemical Properties, and Antioxidant Activity of Organogermanium(IV) Catecholate Complexes.

A series of novel organogermanium(IV) catecholates 1-9 of the general formula R'2Ge(Cat), where R' = Ph, Et, have been synthesized. Compounds were characterized by 1H, 13C NMR, IR spectroscopy, and elemental analysis. The molecular structures of 1-3, 6, and 8 in crystal state were established using single-crystal X-ray analysis. The complexes are tetracoordinate germanium(IV) compounds containing a dioxolene ligand in a dianion (catecholato) form. Electrochemical transformations of target germanium(IV) complexes have been studied by cyclic voltammetry. The electro-oxidation mechanism of complexes 1-5, 7, and 10 (the related complex Ph2Ge(3,5-Cat) where 3,5-Cat is 3,5-di-tert-butylcatecholate) involves the consecutive formation of mono- and dicationic derivatives containing the oxidized forms of redox-active ligands. The stability of the generated monocations depends both on the hydrocarbon groups at the germanium atom and on the substituents in the catecholate ring. Compounds 6, 8, and 9 are oxidized irreversibly under the electrochemical conditions with the formation of unstable complexes. The radical scavenging activity and antioxidant properties of new complexes were estimated in the reaction with DPPH radical, ABTS radical cation, and CUPRACTEAC assay. It has been found that compounds 8 and 9 with benzothiazole or phenol fragments are more active in DPPH test. The presence of electron-rich moieties in the catecholate ligand makes complexes 5 and 7-9 more reactive to ABTS radical cation. The value of CUPRACTEAC for organogermanium(IV) catecholates varies from 0.23 to 1.45. The effect of compounds 1-9 in the process of lipid peroxidation of rat liver (Wistar) homogenate was determined in vitro. It was found that most compounds are characterized by pronounced antioxidant activity. A feature of complexes 1, 3, and 5-9 is the intensification of the antioxidant action with the incubation time. In the presence of additives of complexes 3, 5, 6, and 8, an induction period was observed during the process of lipid peroxidation.

Effects of Germanium embedded fabric on the chondrogenic differentiation of adipose derived stem cells.

Osteoarthritis (OA) is a clinical state which is identified by the degeneration of articular cartilage. OA is a common condition (>500 millions of people affected worldwide), whose frequency is anticipated to continue to rise (> 110 % increase worldwide since 2019). The treatment for early-stage OA is based on a combination of therapeutic approaches, which can include regenerative medicine based on Adipose Derived Stem Cells (ADSCs). Germanium embedded Incrediwear® functional Cred40 fabric has been shown to have positive effects on OA clinically and is envisaged to give encouraging effects also on tissue regeneration. Still, the biological mechanisms underlying this therapeutic modality have not yet been fully defined. We tested the hypothesis that Germanium-embedded Incrediwear® functional Cred40 fabric could enhance chondrogenic differentiation. To this purpose, we applied Incrediwear® to human adipose-derived stem cells (hADSCs) induced to chondrogenic differentiation in vitro. Chondrogenic markers (ACAN, SOX9, RUNX2, COL2A1, COL10A1) were quantified following 21 days of treatment. We also assessed extracellular matrix (ECM) deposition (specifically Collagen and glycosaminoglycans (GAGs)) using Alcian Blue and Sirius Red staining. Here, we provide pilot data to demonstrate that Germanium-embedded Incrediwear® functional Cred40 fabric can enhance hADSCs chondrogenic differentiation and maturity and potentially induce events of cartilage regeneration.

Efficient density functional theory directed identification of siderophores with increased selectivity towards indium and germanium.

Siderophores are promising ligands for application in novel recycling and bioremediation technologies, as they can selectively complex a variety of metals. However, with over 250 known siderophores, the selection of suiting complexants in the wet lab is impractical. Thus, this study established a density functional theory (DFT) based approach to efficiently identify siderophores with increased selectivity towards target metals on the example of germanium and indium. Considering 239 structures, chemically similar siderophores were clustered, and their complexation reactions modeled utilizing DFT. The calculations revealed siderophores with, compared to the reference siderophore desferrioxamine B (DFOB), up to 128 % or 48 % higher selectivity for indium or germanium, respectively. Experimental validation of the method was conducted with fimsbactin A and agrobactin, demonstrating up to 40 % more selective indium binding and at least sevenfold better germanium binding than DFOB, respectively. The results generated in this study open the door for the utilization of siderophores in eco-friendly technologies for the recovery of many different critical metals from various industry waters and leachates or bioremediation approaches. This endeavor is greatly facilitated by applying the herein-created database of geometry-optimized siderophore structures as de novo modeling of the molecules can be omitted.

p-Type Schottky Contacts for Graphene Adjustable-Barrier Phototransistors.

The graphene adjustable-barriers phototransistor is an attractive novel device for potential high speed and high responsivity dual-band photodetection. In this device, graphene is embedded between the semiconductors silicon and germanium. Both n-type and p-type Schottky contacts between graphene and the semiconductors are required for this device. While n-type Schottky contacts are widely investigated, reports about p-type Schottky contacts between graphene and the two involved semiconductors are scarce. In this study, we demonstrate a p-type Schottky contact between graphene and p-germanium. A clear rectification with on-off ratios of close to 103 (±5 V) and a distinct photoresponse at telecommunication wavelengths in the infrared are achieved. Further, p-type silicon is transferred to or deposited on graphene, and we also observe rectification and photoresponse in the visible range for some of these p-type Schottky junctions. These results are an important step toward the realization of functional graphene adjustable-barrier phototransistors.

Preparation and evaluation of germanium concentrate by ultrasonic purification of tannin germanium residue.

Germanium (Ge) is a dispersed metal primarily recovered from secondary Ge-containing resources. The traditional treatment method is hindered by incomplete impurity removal, resulting in a low grade of tannin germanium residue (TGR) and Ge concentrate, high production costs, and significant hazardous waste. This study proposes a new technology involving ultrasonic pre-purification of TGR to enhance the quality of Ge concentrate prepared by roasting. Under optimal conditions (ultrasonic power 225 W, liquid-solid ratio 7:1, H2SO4 concentration 20 g/L, reaction time 30 min, and reaction temperature 40 °C), the removal efficiencies of impurities Zn, Mg, Fe, As, and S from purified tannin germanium residue (PTGR) increased by 4.2%, 4.2%, 17.4%, 8.7%, and 2.9% respectively. Moreover, the Ge content in PTGR increased from 2.9% to 4.1%. The mechanism of ultrasonic action indicated the ultrasonic energy reduced the particle size of the reactants from 67.698 µm to 31.768 µm, thereby accelerating impurity removal. Roasting ultrasonic-purified tannin germanium residue (U-PTGR) at 650 °C with 40 L/h air flow for 120 min produced Ge concentrate with a Ge grade of 33.26%, which is 6.11% higher than the regular method. Analysis using XRD and HRTEM, combined with crystallite size calculation, revealed that the Ge concentrate prepared by U-PTGR exhibited low sintering degree, good crystal properties, and high crystallinity. Implementing this technology could save enterprises approximately $57,412 annually in production costs. Additionally, it holds significant practical importance in reducing hazardous waste emissions and promoting the high-quality development of the Ge industry.

Assessment of contamination, mobility and application of selected technology-critical elements as indicators of anthropogenic pollution of bottom sediments.

The study investigates the potential of technology-critical elements (TCEs) in the bottom sediments of the Biala Przemsza River as indicators of anthropogenic activities. The mass fractions of TCEs: Ge, Ga, In, Tl, Sb and Te (and other elements) in the sediment were analysed by inductively coupled plasma mass spectrometry with the maximum mass fractions: 2.46, 25.6, 0.528, 27.7, 12.5 and 0.293 mg/kg, respectively. Distribution and identification of TCE sources were supported by statistical analysis (principal component analysis coupled with varimax rotation and hierarchical cluster analysis). Assessments of TCE contamination using the geoaccumulation index, pollution index, contamination factor, enrichment factor and the antimony-to-arsenic ratio highlighted the high contamination of bottom sediments by Sb, Ga, Tl, Cd, As, Zn, Pb and moderate contamination by Co, In and V. Distinct behaviour patterns were observed among TCEs, revealing Sb and Tl as potential indicators of Zn-Pb ore mining activities. Co, V, Ge and, to a lesser extent, Te emerged as promising indicators of coal and coal fly ash effluents. Sequential chemical extraction of TCEs showed that Sb, In and Tl had the highest mobility from sediments. The Risk Assessment Code calculations suggest, that in the Biala Przemsza River bottom sediments, there is an average risk of contamination by As, Tl and Mn. Soluble forms of Tl, Ge, Sb, Te and In were identified in descending order, indicating their bioavailability.

Topological Transformation of Hydrogen-Terminated Germanium to Germanium Nanosheets for Fast Lithium Storage.

Germanium has been recognized as a promising anode material for lithium-ion batteries (LIBs) due to its high theoretical capacity and excellent lithium-ion diffusivity. Nonetheless, it is challenging to enhance both the high-rate performance and long-term cycling stability simultaneously. This study introduces a novel heterostructure composed of germanium nanosheets integrated with graphene (Ge NSs@Gr). These nanosheets undergo an in situ phase transformation from a hydrogen-terminated multilayer germanium compound termed germanane (GeH) derived via topochemical deintercalation from CaGe2. This approach mitigates oxidation and prevents restacking by functionalizing the exfoliated germanane with octadecenoic organic molecules. The resultant germanium nanosheets retain their structural integrity from CaGe2 and present an exposed, active (111) surface that features an open crystal lattice, facilitating swift lithium-ion migration conducive to lithium storage. The composite material delivers a substantial reversible capacity of 1220 mA h g-1 at a current density of 0.2 C and maintains a capacity of 456 mA h g-1 even at an ultrahigh current density of 10 C over extended cycling. Impressively, a capacity of 316 mA h g-1 remains after 5000 cycles. The exceptional high-rate performance and durable cycling stability underscore the Ge NSs@Gr anode's potential as a highly viable option for LIBs.

Electrical, Optical and Thermal Properties of Ge-Si-Sn-O Thin Films.

This work evaluates the electrical, optical and thermal properties of Sn-doped GexSi1-xOy thin films for use as microbolometer sensing materials. The films were prepared using a combination of a radio frequency (RF) magnetron and direct current (DC) sputtering using a Kurt J Leskar Proline PVD-75 series sputtering machine. Thin films were deposited in an O2+Ar environment at a chamber pressure of 4 mTorr. The thicknesses of the thin films were varied between 300 nm-1.2 µm by varying the deposition time. The morphology and microstructure of thin films were investigated by atomic force microscope (AFM) imaging and X-ray diffraction (XRD), while the atomic composition was determined using the energy dispersive spectroscopy (EDS) function of a scanning electron microscope. The thin film with an atomic composition of Ge0.45Si0.05Sn0.15O0.35 was found to be amorphous. We used the Arrhenius relationship to determine the activation energy as well as temperature coefficient of resistance of the thin films, which were found to be 0.2529 eV and -3.26%/K, respectively. The noise voltage power spectral density (PSD) of the film was analyzed using a Primarius-9812DX noise analyzer using frequencies ranging from 2 Hz to 10 kHz. The noise voltage PSD of the film was found to be 1.76 × 10-11 V2/Hz and 2.78 × 10-14 V2/Hz at 2 Hz and 1KHz frequencies, respectively. The optical constants were determined using the ellipsometry reflection data of samples using an RC2 and infrared (IR) VASE Mark-II ellipsometer from J A Woollam. Absorption, transmission and reflection data for a wavelength range of 900 nm-5000 nm were also determined. We also determined the optical constant values such as the real and imaginary parts of refractive index (n and k, respectively) and real and imaginary part of permittivity (ε1 and ε2, respectively) for wavelength ranges between 193 nm to 35 µm. An optical band gap of 1.03 eV was determined from absorption data and using Tauc's equation. In addition, the thermal conductivity of the film was analyzed using a Linseis thin film analyzer employing the 3ω method. The thermal conductivity of a 780 nm thick film was found to be 0.38 Wm-1K-1 at 300 K. From the data, the Ge-Si-Sn-O alloy was found to be a promising material for use as a sensing material for microbolometers.

Normal-Incidence Germanium Photodetectors Integrated with Polymer Microlenses for Optical Fiber Communication Applications.

We present a novel photon-acid diffusion method to integrate polymer microlenses (MLs) on a four-channel, high-speed photo-receiver consisting of normal-incidence germanium (Ge) p-i-n photodiodes (PDs) fabricated on a 200 mm Si substrate. For a 29 µm diameter PD capped with a 54 µm diameter ML, its dark current, responsivity, 3 dB bandwidth (BW), and effective aperture size at -3 V bias and 850 nm wavelength are measured to be 138 nA, 0.6 A/W, 21.4 GHz, and 54 µm, respectively. The enlarged aperture size significantly decouples the tradeoff between aperture size and BW and enhances the optical fiber misalignment tolerance from ±5 µm to ±15 µm to ease the module packaging precision. The sensitivity of the photo-receiver is measured to be -9.2 dBm at 25.78 Gb/s with a bit error rate of 10-12 using non-return-to-zero (NRZ) transmission. Reliability tests are performed, and the results show that the fabricated Ge PDs integrated with polymer MLs pass the GR-468 reliability assurance standard. The demonstrated photo-receiver, a first of its kind to the best of our knowledge, features decent performance, high yield, high throughput, low cost, and compatibility with complementary metal-oxide-semiconductor (CMOS) fabrication processes, and may be further applied to 400 Gb/s pulse-amplitude modulation four-level (PAM4) communication.

Improved recycling of a gasification fly ash: An integrated waste management approach within the framework of a Circular Economy.

A Circular Waste Management alternative is considered in this paper in which a complete ash valorization process is proposed for an Integrated Gasification with Combined Cycle fly ash, trying to extract maximum value from this waste before it is discarded. In the paper, germanium, a scarce resource vital in our modern society, is first extracted from fly ash using water, with an extraction yield of 85%, and subsequently, the leached fly ash is used in the manufacture of fire-resistant boards containing 60% ash, thereby avoiding its disposal in a landfill. The potential environmental impact caused by the two stages of the process was analyzed, and the final effluent was considered to achieve a zero-discharge objective. This paper contributes to the development of a more sustainable management alternative for an industrial waste produced in increased amounts and provides the basis for a symbiotic coupling relationship among various industrial sectors.

A Phosphanyl Phosphagermene and its Reactivity.

Reaction of a nucleophilic germylene Ge[CH(SiMe3)2]2 with the phosphanyl phosphaketene [{(H2C)(NDipp)}2P]PCO induces decarbonylation to form a phosphanyl phosphagermene [{(H2C)(NDipp)}2P]P=Ge[CH(SiMe3)2]2 (1; Dipp=2,6-diisopropyl-phenyl). Addition of CO2 or MeCN to 1 results in [3+2]-cycloaddition reactions to afford five-membered heterocycles. This mode of reactivity is reminiscent of that observed for frustrated Lewis pairs, with the pendant phosphanyl group acting as a base and the germanium center as a Lewis acid. Contrastingly, 1,2-addition across the P=Ge bond was observed when using ammonia, small primary amines (NH2 nP), or metal complexes (e. g. Au(PPh3)Cl and ZnEt2). These latter reactions allow for the one-step synthesis of metal phosphide complexes.

Coherent Control of a Few-Channel Hole Type Gatemon Qubit.

Gatemon qubits are the electrically tunable cousins of superconducting transmon qubits. In this work, we demonstrate the full coherent control of a gatemon qubit based on hole carriers in a Ge/Si core/shell nanowire, with the longest coherence times in group IV material gatemons to date. The key to these results is a high-quality Josephson junction obtained using a straightforward and reproducible annealing technique. We demonstrate that the transport through the narrow junction is dominated by only two quantum channels, with transparencies up to unity. This novel qubit platform holds great promise for quantum information applications, not only because it incorporates technologically relevant materials, but also because it provides new opportunities, like an ultrastrong spin-orbit coupling in the few-channel regime of Josephson junctions.