Current-induced domain wall nucleation and its pinning characteristics at a notch in a spin-valve nanowire. | Nanotechnology;20(12): 125401, 2009 Mar 25. | MEDLINE

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Current-induced domain wall nucleation and its pinning characteristics at a notch in a spin-valve nanowire.

Jang, Youngman; Yoon, Seungha; Lee, Kisu; Lee, Seungkyo; Nam, Chunghee; Cho, B K.

Affiliation

Jang Y; Department of Materials Science and Engineering, GIST, School of Photonics Science and Technology, Gwangju, Korea.

Nanotechnology ; 20(12): 125401, 2009 Mar 25.

Article in En | MEDLINE | ID: mdl-19420465

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2009 Document type: Article Country of publication:

Search on Google

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2009 Document type: Article Country of publication: