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Capacitance of thin-film ferroelectrics under different drive signals.
Li, Huadong; Subramanyam, Guru.
Affiliation
  • Li H; Department of Electrical and Computer Engineering, University of Dayton, Dayton, OH, USA.
Article in En | MEDLINE | ID: mdl-19811989
ABSTRACT
Thin-film ferroelectric capacitance can be obtained by 2 different methods. Capacitance obtained using the derivative of its hysteresis loop is related to large applied signals and can be called the large-signal capacitance. Capacitance measured directly with a small, applied ac signal together with a slow changing dc bias is called the small-signal capacitance. This paper investigated the voltage dependence of the large- and small-signal capacitances. Measurements show that the large-signal C-V curve of thin-film ferroelectrics has much sharper peaks and higher peak values than the small-signal C-V curve. Analyses based on the Landau-Khalatnikov model shows that practical small-signal capacitance is closer to the ideal capacitance. However, its C-V curve has clearance areas around the coercive voltage, and the polarization switching is not reflected in the small-signal capacitance. This causes the peaks of small-signal C-V curves to be lower than that of large-signal C-V curves.

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: IEEE Trans Ultrason Ferroelectr Freq Control Journal subject: MEDICINA NUCLEAR Year: 2009 Document type: Article Affiliation country:

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: IEEE Trans Ultrason Ferroelectr Freq Control Journal subject: MEDICINA NUCLEAR Year: 2009 Document type: Article Affiliation country: