Epitaxial growth of graphitic carbon on C-face SiC and Sapphire by chemical vapor deposition (CVD). | J Cryst Growth;312(21): 3219-3224, 2010 Oct 15. | MEDLINE

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Epitaxial growth of graphitic carbon on C-face SiC and Sapphire by chemical vapor deposition (CVD).

Hwang, Jeonghyun; Shields, Virgil B; Thomas, Christopher I; Shivaraman, Shriram; Hao, Dong; Kim, Moonkyung; Woll, Arthur R; Tompa, Gary S; Spencer, Michael G.

Affiliation

Hwang J; School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA.

J Cryst Growth ; 312(21): 3219-3224, 2010 Oct 15.

Article in En | MEDLINE | ID: mdl-20976026

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: J Cryst Growth Year: 2010 Document type: Article Affiliation country: Country of publication:

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: J Cryst Growth Year: 2010 Document type: Article Affiliation country: Country of publication: