High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask. | Opt Express;19 Suppl 4: A943-8, 2011 Jul 04. | MEDLINE

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High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask.

Cho, Chu-Young; Kwon, Min-Ki; Park, Il-Kyu; Hong, Sang-Hyun; Kim, Jae-Joon; Park, Seong-Eun; Kim, Sung-Tae; Park, Seong-Ju.

Affiliation

Cho CY; School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, South Korea.

Opt Express ; 19 Suppl 4: A943-8, 2011 Jul 04.

Article in En | MEDLINE | ID: mdl-21747565

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Opt Express Journal subject: OFTALMOLOGIA Year: 2011 Document type: Article Affiliation country: Country of publication:

Search on Google

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Opt Express Journal subject: OFTALMOLOGIA Year: 2011 Document type: Article Affiliation country: Country of publication: