Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping. | Nanoscale Res Lett;7(1): 99, 2012 Feb 02. | MEDLINE

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Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping.

Dalapati, Goutam Kumar; Shun Wong, Terence Kin; Li, Yang; Chia, Ching Kean; Das, Anindita; Mahata, Chandreswar; Gao, Han; Chattopadhyay, Sanatan; Kumar, Manippady Krishna; Seng, Hwee Leng; Maiti, Chinmay Kumar; Chi, Dong Zhi.

Affiliation

Dalapati GK; Institute of Materials Research and Engineering, A*STAR, (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602, Singapore. dalapatig@imre.a-star.edu.sg.

Nanoscale Res Lett ; 7(1): 99, 2012 Feb 02.

Article in En | MEDLINE | ID: mdl-22297193

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanoscale Res Lett Year: 2012 Document type: Article Affiliation country: Country of publication:

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanoscale Res Lett Year: 2012 Document type: Article Affiliation country: Country of publication: