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Arc-melting to narrow the bandgap of oxide semiconductors.
Ou, Gang; Li, Dongke; Pan, Wei; Zhang, Qinghua; Xu, Ben; Gu, Lin; Nan, Cewen; Wu, Hui.
Affiliation
  • Ou G; State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
Adv Mater ; 27(16): 2589-94, 2015 Apr 24.
Article in En | MEDLINE | ID: mdl-25757453
ABSTRACT
The bandgap of a series of oxide semiconductors is narrowed by a quick and facile arc-melting method. A defective structure is formed in the fast melting and cooling process without changing its phase structure. Enhanced optical and electrical properties are found in the arc-melted oxide, such as enhanced photocatalytic properties of the arc-melted ZnO under visible light.
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Adv Mater Journal subject: BIOFISICA / QUIMICA Year: 2015 Document type: Article Affiliation country:
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Adv Mater Journal subject: BIOFISICA / QUIMICA Year: 2015 Document type: Article Affiliation country: