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The Impact of the Shallow-Trench Isolation Effect on Flicker Noise of Source Follower MOSFETs in a CMOS Image Sensor.
Fan, C C; Chiu, Y C; Liu, C; Lai, W W; Cheng, C H; Lin, D L; Li, G R; Lo, Y H; Chang, C W; Tsai, C C; Chang, C Y.
Affiliation
  • Fan CC; Department of Electronics Engineering, National Chiao Tung University, Hsinchu City 30010, Taiwan.
  • Chiu YC; Department of Electronics Engineering, National Chiao Tung University, Hsinchu City 30010, Taiwan.
  • Liu C; Department of Electro-Physics, National Chiao Tung University, Hsinchu City 30010, Taiwan.
  • Lai WW; Department of Electronics Engineering, National Chiao Tung University, Hsinchu City 30010, Taiwan.
  • Cheng CH; Department of Mechatronic Engineering, National Taiwan Normal University, Taipei, 106, Taiwan.
  • Lin DL; Himax Technologies, Inc., Tainan City 74148, Taiwan.
  • Li GR; Himax Technologies, Inc., Tainan City 74148, Taiwan.
  • Lo YH; Himax Technologies, Inc., Tainan City 74148, Taiwan.
  • Chang CW; Himax Technologies, Inc., Tainan City 74148, Taiwan.
  • Tsai CC; Himax Technologies, Inc., Tainan City 74148, Taiwan.
  • Chang CY; Department of Electronics Engineering, National Chiao Tung University, Hsinchu City 30010, Taiwan.
J Nanosci Nanotechnol ; 18(6): 4217-4221, 2018 Jun 01.
Article in En | MEDLINE | ID: mdl-29442765
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: J Nanosci Nanotechnol Year: 2018 Document type: Article Affiliation country: Country of publication:
Fulltext
Add to My VHL
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: J Nanosci Nanotechnol Year: 2018 Document type: Article Affiliation country: Country of publication: