Deuterated silicon nitride photonic devices for broadband optical frequency comb generation.
Opt Lett
; 43(7): 1527-1530, 2018 Apr 01.
Article
in En
| MEDLINE
| ID: mdl-29601021
ABSTRACT
We report and characterize low-temperature, plasma-deposited deuterated silicon nitride films for nonlinear integrated photonics. With a peak processing temperature less than 300°C, it is back-end compatible with complementary metal-oxide semiconductor substrates. We achieve microresonators with a quality factor of up to 1.6×106 at 1552 nm and >1.2×106 throughout λ=1510-1600 nm, without annealing or stress management (film thickness of 920 nm). We then demonstrate the immediate utility of this platform in nonlinear photonics by generating a 1 THz free-spectral-range, 900 nm bandwidth modulation-instability microresonator Kerr comb and octave-spanning, supercontinuum-broadened spectra.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Opt Lett
Year:
2018
Document type:
Article