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Low-Voltage Metal-Oxide Thin Film Transistors Using P-Type Tin-Oxide Semiconductors.
Chen, Y L; Liou, G L; Hsu, H H; Chen, P C; Zheng, Z W; Wu, Y H; Cheng, C H; Liu, C H; Chung, L H.
Affiliation
  • Chen YL; Department of Mechatronic Engineering, National Taiwan Normal University, Taipei 10610, Taiwan.
  • Liou GL; Department of Mechatronic Engineering, National Taiwan Normal University, Taipei 10610, Taiwan.
  • Hsu HH; Department of Materials & Mineral Resources Engineering, National Taipei University of Technology, Taipei 10608, Taiwan.
  • Chen PC; Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan.
  • Zheng ZW; Department of Electronic Engineering, Xiamen University, Xiamen 361005, China.
  • Wu YH; Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan.
  • Cheng CH; Department of Mechatronic Engineering, National Taiwan Normal University, Taipei 10610, Taiwan.
  • Liu CH; Department of Mechatronic Engineering, National Taiwan Normal University, Taipei 10610, Taiwan.
  • Chung LH; Department of Mechatronic Engineering, National Taiwan Normal University, Taipei 10610, Taiwan.
J Nanosci Nanotechnol ; 19(9): 5619-5623, 2019 Sep 01.
Article in En | MEDLINE | ID: mdl-30961716
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: J Nanosci Nanotechnol Year: 2019 Document type: Article Affiliation country:
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: J Nanosci Nanotechnol Year: 2019 Document type: Article Affiliation country: