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Enhancement of van der Waals Interlayer Coupling through Polar Janus MoSSe.
Zhang, Kunyan; Guo, Yunfan; Ji, Qingqing; Lu, Ang-Yu; Su, Cong; Wang, Hua; Puretzky, Alexander A; Geohegan, David B; Qian, Xiaofeng; Fang, Shiang; Kaxiras, Efthimios; Kong, Jing; Huang, Shengxi.
Affiliation
  • Zhang K; Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
  • Guo Y; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
  • Ji Q; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
  • Lu AY; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
  • Su C; Department of Nuclear and Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
  • Wang H; Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843, United States.
  • Puretzky AA; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.
  • Geohegan DB; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.
  • Qian X; Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843, United States.
  • Fang S; Department of Physics and Astronomy, Center for Materials Theory, Rutgers University, Piscataway, New Jersey 08854, United States.
  • Kaxiras E; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States.
  • Kong J; John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States.
  • Huang S; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
J Am Chem Soc ; 142(41): 17499-17507, 2020 Oct 14.
Article in En | MEDLINE | ID: mdl-32942848
ABSTRACT
Interlayer coupling plays essential roles in the quantum transport, polaritonic, and electrochemical properties of stacked van der Waals (vdW) materials. In this work, we report the unconventional interlayer coupling in vdW heterostructures (HSs) by utilizing an emerging 2D material, Janus transition metal dichalcogenides (TMDs). In contrast to conventional TMDs, monolayer Janus TMDs have two different chalcogen layers sandwiching the transition metal and thus exhibit broken mirror symmetry and an intrinsic vertical dipole moment. Such a broken symmetry is found to strongly enhance the vdW interlayer coupling by as much as 13.2% when forming MoSSe/MoS2 HS as compared to the pristine MoS2 counterparts. Our noncontact ultralow-frequency Raman probe, linear chain model, and density functional theory calculations confirm the enhancement and reveal the origins as charge redistribution in Janus MoSSe and reduced interlayer distance. Our results uncover the potential of tuning interlayer coupling strength through Janus heterostacking.

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: J Am Chem Soc Year: 2020 Document type: Article Affiliation country:

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: J Am Chem Soc Year: 2020 Document type: Article Affiliation country: