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Scalable Synthesis of a Sub-10 nm Chalcopyrite (CuFeS2) Nanocrystal by the Microwave-Assisted Synthesis Technique and Its Application in a Heavy-Metal-Free Broad-Band Photodetector.
Kumar, Brajesh; Singh, Satya Veer; Chattopadhyay, Abhimanyu; Biring, Sajal; Pal, Bhola N.
Affiliation
  • Kumar B; School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India.
  • Singh SV; School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India.
  • Chattopadhyay A; School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India.
  • Biring S; Organic Electronics Research Center and Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan.
  • Pal BN; School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India.
ACS Omega ; 5(40): 25947-25953, 2020 Oct 13.
Article in En | MEDLINE | ID: mdl-33073121
A heavy-metal-free chalcopyrite (CuFeS2) nanocrystal has been synthesized via microwave-assisted growth. Large-scale nanocrystals with an average particle size of 5 nm are fabricated by this technique within a very short period of time without any need for organic ligands. Scanning electron microscopy study (SEM) of individual synthesis steps indicates that aggregates of nanocrystals are formed as flakes during microwave-assisted synthesis. The colloidal solution of the CuFeS2 nanocrystal was prepared by sonicating these flakes. Transmission electron microscopy (TEM) study reveals the growth of sub-10 nm CuFeS2 nanocrystals that are further characterized by X-ray diffraction. UV-visible absorption spectroscopic study shows that the band gap of this nanocrystal is ∼1.3 eV. To investigate the photosensitive nature of this nanocrystal, a bilayer p-n heterojunction photodetector has been fabricated using this nontoxic CuFeS2 nanocrystal as a photoactive material and n-type ZnO as a charge-transport layer. The detectivity of this photodetector reaches above 1012 Jones in visible and near-infrared (NIR) regions under 10 V external bias, which is significantly high for a nontoxic nanocrystal-based photodetector.

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Omega Year: 2020 Document type: Article Affiliation country: Country of publication:

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Omega Year: 2020 Document type: Article Affiliation country: Country of publication: