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Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs2AgBiBr6-Based Memory Device.
Lv, Fengzhen; Zhong, Tingting; Qin, Yongfu; Qin, Haijun; Wang, Wenfeng; Liu, Fuchi; Kong, Wenjie.
Affiliation
  • Lv F; Guangxi Key Laboratory of Nuclear Physics and Technology, School of Physical Science and Technology, Guangxi Normal University, Guilin 541004, China.
  • Zhong T; Guangxi Key Laboratory of Nuclear Physics and Technology, School of Physical Science and Technology, Guangxi Normal University, Guilin 541004, China.
  • Qin Y; Guangxi Key Laboratory of Nuclear Physics and Technology, School of Physical Science and Technology, Guangxi Normal University, Guilin 541004, China.
  • Qin H; Guangxi Key Laboratory of Nuclear Physics and Technology, School of Physical Science and Technology, Guangxi Normal University, Guilin 541004, China.
  • Wang W; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
  • Liu F; Guangxi Key Laboratory of Nuclear Physics and Technology, School of Physical Science and Technology, Guangxi Normal University, Guilin 541004, China.
  • Kong W; Guangxi Key Laboratory of Nuclear Physics and Technology, School of Physical Science and Technology, Guangxi Normal University, Guilin 541004, China.
Nanomaterials (Basel) ; 11(6)2021 May 21.
Article in En | MEDLINE | ID: mdl-34064022
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanomaterials (Basel) Year: 2021 Document type: Article Affiliation country:
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanomaterials (Basel) Year: 2021 Document type: Article Affiliation country: