Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs2AgBiBr6-Based Memory Device.
Nanomaterials (Basel)
; 11(6)2021 May 21.
Article
in En
| MEDLINE
| ID: mdl-34064022
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01-internacional
Database:
MEDLINE
Language:
En
Journal:
Nanomaterials (Basel)
Year:
2021
Document type:
Article
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