Your browser doesn't support javascript.
loading
Boron-Doped Diamond/GaN Heterojunction-The Influence of the Low-Temperature Deposition.
Sobaszek, Michal; Gnyba, Marcin; Kulesza, Slawomir; Bramowicz, Miroslaw; Klimczuk, Tomasz; Bogdanowicz, Robert.
Affiliation
  • Sobaszek M; Faculty of Electronics, Telecommunications and Informatics, Gdansk University of Technology, 11/12 Narutowicza Str., 80-233 Gdansk, Poland.
  • Gnyba M; Faculty of Electronics, Telecommunications and Informatics, Gdansk University of Technology, 11/12 Narutowicza Str., 80-233 Gdansk, Poland.
  • Kulesza S; Faculty of Technical Sciences, Warmia and Mazury University in Olsztyn, 11 Oczapowskiego Str., 10-719 Olsztyn, Poland.
  • Bramowicz M; Faculty of Technical Sciences, Warmia and Mazury University in Olsztyn, 11 Oczapowskiego Str., 10-719 Olsztyn, Poland.
  • Klimczuk T; Department of Solid State Physics, Faculty of Applied Physics and Mathematics, Gdansk University of Technology, 80-233 Gdansk, Poland.
  • Bogdanowicz R; Faculty of Electronics, Telecommunications and Informatics, Gdansk University of Technology, 11/12 Narutowicza Str., 80-233 Gdansk, Poland.
Materials (Basel) ; 14(21)2021 Oct 23.
Article in En | MEDLINE | ID: mdl-34771852
Key words
Fulltext
Add to My VHL
Print
XML
PubMed Links
Search on Google

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Materials (Basel) Year: 2021 Document type: Article Affiliation country:
Fulltext
Add to My VHL
Print
XML
PubMed Links
Search on Google

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Materials (Basel) Year: 2021 Document type: Article Affiliation country: