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A boost of thermoelectric generation performance for polycrystalline InTe by texture modulation.
Feng, Jianghe; Zhou, Menghui; Li, Juan; Dong, Guoying; Gao, Shufang; Min, Erbiao; Zhang, Chuang; He, Jiaqing; Sun, Rong; Liu, Ruiheng.
Affiliation
  • Feng J; Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China. rh.liu@sait.ac.cn.
  • Zhou M; Shenzhen Key Laboratory of Thermoelectric Materials, Department of Physics, Southern University of Science and Technology, 518055 Shenzhen, People's Republic of China. he.jq@sustech.edu.cn.
  • Li J; Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China. rh.liu@sait.ac.cn.
  • Dong G; School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China. 501147@yangtzeu.edu.cn.
  • Gao S; Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China. rh.liu@sait.ac.cn.
  • Min E; Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China. rh.liu@sait.ac.cn.
  • Zhang C; School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China. 501147@yangtzeu.edu.cn.
  • He J; School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China. 501147@yangtzeu.edu.cn.
  • Sun R; Shenzhen Key Laboratory of Thermoelectric Materials, Department of Physics, Southern University of Science and Technology, 518055 Shenzhen, People's Republic of China. he.jq@sustech.edu.cn.
  • Liu R; Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China. rh.liu@sait.ac.cn.
Mater Horiz ; 10(8): 3082-3089, 2023 Jul 31.
Article in En | MEDLINE | ID: mdl-37218449
ABSTRACT
The new rising binary InTe displays advantageously high electronic conductivity and low thermal conductivity along the [110] direction, providing a high potential of texture modulation for thermoelectric performance improvement. In this work, coarse crystalline InTe material with a high degree of texture along the [110] direction was realized by the oriented crystal hot-deformation method. The coarse grains with high texture not only maintain the preferred orientation of the zone-melting crystal as far as possible, but also greatly depress the grain boundary scattering, thus leading to the highest room temperature power factor of 8.7 µW cm-1 K-1 and a high average figure of merit of 0.71 in the range of 300-623 K. Furthermore, the polycrystalline characteristic with refined grains also promotes the mechanical properties. As a result, an 8-couple thermoelectric generator module consisting of p-type InTe and commercial n-type Bi2Te2.7Se0.3 legs was successfully integrated and a high conversion efficiency of ∼5.0% under the temperature difference of 290 K was achieved, which is comparable to traditional Bi2Te3 based modules. This work not only demonstrates the potential of InTe as a power generator near room temperature, but also provides one more typical example of a texture modulation strategy beyond the traditional Bi2Te3 thermoelectrics.

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Mater Horiz Year: 2023 Document type: Article

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Mater Horiz Year: 2023 Document type: Article