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Anisotropy and thermal properties in GeTe semiconductor by Raman analysis.
Yang, Shuai; Sui, Fengrui; Liu, Yucheng; Qi, Ruijuan; Feng, Xiaoyu; Dong, Shangwei; Yang, Pingxiong; Yue, Fangyu.
Affiliation
  • Yang S; Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China. fyyue@ee.ecnu.edu.cn.
  • Sui F; Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China. fyyue@ee.ecnu.edu.cn.
  • Liu Y; Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China. fyyue@ee.ecnu.edu.cn.
  • Qi R; Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China. fyyue@ee.ecnu.edu.cn.
  • Feng X; Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China. fyyue@ee.ecnu.edu.cn.
  • Dong S; Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China. fyyue@ee.ecnu.edu.cn.
  • Yang P; Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China. fyyue@ee.ecnu.edu.cn.
  • Yue F; Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China. fyyue@ee.ecnu.edu.cn.
Nanoscale ; 15(32): 13297-13303, 2023 Aug 17.
Article in En | MEDLINE | ID: mdl-37539838
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanoscale Year: 2023 Document type: Article Affiliation country: Country of publication:
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanoscale Year: 2023 Document type: Article Affiliation country: Country of publication: