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Polarization-Sensitive, Self-Powered, and Broadband Semimetal MoTe2/MoS2 van der Waals Heterojunction for Photodetection and Imaging.
Kong, Lingxian; Li, Guangliang; Su, Qi; Tan, Xianhua; Zhang, Xuning; Liu, Zhiyong; Liao, Guanglan; Sun, Bo; Shi, Tielin.
Affiliation
  • Kong L; State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.
  • Li G; School of Aerospace Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
  • Su Q; School of Aerospace Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
  • Tan X; State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.
  • Zhang X; School of Mechanical and Electrical Engineering, Central South University, Changsha 410083, China.
  • Liu Z; State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.
  • Liao G; State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.
  • Sun B; State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.
  • Shi T; School of Aerospace Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
ACS Appl Mater Interfaces ; 15(36): 43135-43144, 2023 Sep 13.
Article in En | MEDLINE | ID: mdl-37590916
ABSTRACT
The emerging type II Weyl semimetal 1T' MoTe2 as a promising material in polarization-sensitive photodetectors has aroused much attention due to its narrow bandgap and intrinsic in-plane anisotropic crystal structure. However, the semimetal properties lead to a large dark current and a low response. Herein, we demonstrate for the first time an all-2D semimetal MoTe2/MoS2 van der Waals (vdWs) heterojunction to improve the performance of the photodetectors and realize polarization-sensitive, self-powered, and broadband photodetection and imaging. Owing to the built-in electric field of the heterojunction, the device achieves a self-powered photoresponse ranging from 520 to 1550 nm. Under 915 nm light illumination, the device demonstrates outstanding performance, including a high responsivity of 79 mA/W, a specific detectivity of 1.2 × 1010 Jones, a fast rise/decay time of 180/202 µs, and a high on/off ratio of 1.3 × 10.3 Wavelength-dependent photocurrent anisotropic ratio is revealed to vary from 1.10 at 638 nm to 2.24 at 1550 nm. Furthermore, we demonstrate the polarization imaging capabilities of the device in scattering surroundings, and the DoLP and AoLP images achieve 78% and 112% contrast enhancement, respectively, compared to the S0. This work opens up new avenues to develop anisotropic semimetals heterojunction photodetectors for high-performance polarization-sensitive photodetection and next-generation polarized imaging.
Key words

Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Diagnostic_studies Language: En Journal: ACS Appl Mater Interfaces Journal subject: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Year: 2023 Document type: Article Affiliation country:

Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Diagnostic_studies Language: En Journal: ACS Appl Mater Interfaces Journal subject: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Year: 2023 Document type: Article Affiliation country: