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Influence of Channel Surface with Ozone Annealing and UV Treatment on the Electrical Characteristics of Top-Gate InGaZnO Thin-Film Transistors.
Oh, Changyong; Kim, Taehyeon; Ju, Myeong Woo; Kim, Min Young; Park, So Hee; Lee, Geon Hyeong; Kim, Hyunwuk; Kim, SeHoon; Kim, Bo Sung.
Affiliation
  • Oh C; Department of Applied Physics, Korea University, Sejong 30019, Republic of Korea.
  • Kim T; E·ICT-Culture·Sports Track, Korea University, Sejong 30019, Republic of Korea.
  • Ju MW; Memory Diffusion Technology Team, Samsung Electronics, Pyeongtaek-si 17786, Republic of Korea.
  • Kim MY; Department of Applied Physics, Korea University, Sejong 30019, Republic of Korea.
  • Park SH; E·ICT-Culture·Sports Track, Korea University, Sejong 30019, Republic of Korea.
  • Lee GH; Department of Applied Physics, Korea University, Sejong 30019, Republic of Korea.
  • Kim H; Department of Applied Physics, Korea University, Sejong 30019, Republic of Korea.
  • Kim S; Department of Applied Physics, Korea University, Sejong 30019, Republic of Korea.
  • Kim BS; Display Development Division, ENF Technology Co., Ltd., Yongin-si 17084, Republic of Korea.
Materials (Basel) ; 16(18)2023 Sep 11.
Article in En | MEDLINE | ID: mdl-37763439
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Materials (Basel) Year: 2023 Document type: Article Country of publication:
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Materials (Basel) Year: 2023 Document type: Article Country of publication: