Self-Aligned Top-Gate Structure in High-Performance 2D p-FETs via van der Waals Integration and Contact Spacer Doping.
Nano Lett
; 23(23): 11345-11352, 2023 Dec 13.
Article
in En
| MEDLINE
| ID: mdl-37983163
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Nano Lett
Year:
2023
Document type:
Article