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Near-room temperature ferromagnetism and a tunable anomalous Hall effect in atomically thin Fe4CoGeTe2.
Yan, Shaohua; He, Hui-Hui; Fu, Yang; Zhao, Ning-Ning; Tian, Shangjie; Yin, Qiangwei; Meng, Fanyu; Cao, Xinyu; Wang, Le; Chen, Shanshan; Son, Ki-Hoon; Choi, Jun Woo; Ryu, Hyejin; Wang, Shouguo; Lei, Hechang; Liu, Kai; Zhang, Xiao.
Affiliation
  • Yan S; Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China. hlei@ruc.edu.cn.
  • He HH; Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China.
  • Fu Y; Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China. hlei@ruc.edu.cn.
  • Zhao NN; Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China.
  • Tian S; Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China. hlei@ruc.edu.cn.
  • Yin Q; Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China.
  • Meng F; Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China. hlei@ruc.edu.cn.
  • Cao X; Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China.
  • Wang L; Anhui Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University, Hefei 230601, China.
  • Chen S; Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China. hlei@ruc.edu.cn.
  • Son KH; Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China.
  • Choi JW; Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China. hlei@ruc.edu.cn.
  • Ryu H; Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China.
  • Wang S; Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China. hlei@ruc.edu.cn.
  • Lei H; Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China.
  • Liu K; State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China. zhangxiaobupt@bupt.edu.cn.
  • Zhang X; Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China. hlei@ruc.edu.cn.
Nanoscale ; 16(3): 1406-1414, 2024 Jan 18.
Article in En | MEDLINE | ID: mdl-38165953
ABSTRACT
Itinerant ferromagnetism at room temperature is a key factor for spin transport and manipulation. Here, we report the realization of near-room temperature itinerant ferromagnetism in Co doped Fe5GeTe2 thin flakes. The ferromagnetic transition temperature TC (∼323 K-337 K) is almost unchanged when the thickness is as low as 12 nm and is still about 284 K at 2 nm (bilayer thickness). Theoretical calculations further indicate that the ferromagnetism persists in monolayer Fe4CoGeTe2. In addition to the robust ferromagnetism down to the ultrathin limit, Fe4CoGeTe2 exhibits an unusual temperature- and thickness-dependent intrinsic anomalous Hall effect. We propose that it could be ascribed to the dependence of the band structure on thickness that changes the Berry curvature near the Fermi energy level subtly. The near-room temperature ferromagnetism and tunable anomalous Hall effect in atomically thin Fe4CoGeTe2 provide opportunities to understand the exotic transport properties of two-dimensional van der Waals magnetic materials and explore their potential applications in spintronics.

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanoscale Year: 2024 Document type: Article Affiliation country: Country of publication:

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanoscale Year: 2024 Document type: Article Affiliation country: Country of publication: