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High-performance terahertz modulators induced by substrate field in Te-based all-2D heterojunctions.
Zhang, Pujing; Liang, Qihang; Zhou, Qingli; Chen, Jinyu; Li, Menglei; Deng, Yuwang; Liang, Wanlin; Zhang, Liangliang; Zhang, Qinghua; Gu, Lin; Ge, Chen; Jin, Kui-Juan; Zhang, Cunlin; Yang, Guozhen.
Affiliation
  • Zhang P; Department of Physics, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, and Beijing Advanced Innovation Center for Imaging Theory and Technology, Capital Normal University, Beijing, 100048, China.
  • Liang Q; Department of Physics, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, and Beijing Advanced Innovation Center for Imaging Theory and Technology, Capital Normal University, Beijing, 100048, China.
  • Zhou Q; Department of Physics, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, and Beijing Advanced Innovation Center for Imaging Theory and Technology, Capital Normal University, Beijing, 100048, China. qlzhou@cnu.edu.cn.
  • Chen J; Department of Physics, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, and Beijing Advanced Innovation Center for Imaging Theory and Technology, Capital Normal University, Beijing, 100048, China.
  • Li M; Department of Physics, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, and Beijing Advanced Innovation Center for Imaging Theory and Technology, Capital Normal University, Beijing, 100048, China.
  • Deng Y; Department of Physics, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, and Beijing Advanced Innovation Center for Imaging Theory and Technology, Capital Normal University, Beijing, 100048, China.
  • Liang W; Department of Physics, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, and Beijing Advanced Innovation Center for Imaging Theory and Technology, Capital Normal University, Beijing, 100048, China.
  • Zhang L; Department of Physics, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, and Beijing Advanced Innovation Center for Imaging Theory and Technology, Capital Normal University, Beijing, 100048, China.
  • Zhang Q; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
  • Gu L; Department of Materials Science and Engineering, Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Tsinghua University, Beijing, 100084, China.
  • Ge C; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China. gechen@iphy.ac.cn.
  • Jin KJ; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
  • Zhang C; Department of Physics, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, and Beijing Advanced Innovation Center for Imaging Theory and Technology, Capital Normal University, Beijing, 100048, China.
  • Yang G; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Light Sci Appl ; 13(1): 67, 2024 Mar 05.
Article in En | MEDLINE | ID: mdl-38443377
ABSTRACT
High-performance active terahertz modulators as the indispensable core components are of great importance for the next generation communication technology. However, they currently suffer from the tradeoff between modulation depth and speed. Here, we introduce two-dimensional (2D) tellurium (Te) nanofilms with the unique structure as a new class of optically controlled terahertz modulators and demonstrate their integrated heterojunctions can successfully improve the device performances to the optimal and applicable levels among the existing all-2D broadband modulators. Further photoresponse measurements confirm the significant impact of the stacking order. We first clarify the direction of the substrate-induced electric field through first-principles calculations and uncover the unusual interaction mechanism in the photoexcited carrier dynamics associated with the charge transfer and interlayer exciton recombination. This advances the fundamental and applicative research of Te nanomaterials in high-performance terahertz optoelectronics.

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Light Sci Appl Year: 2024 Document type: Article Affiliation country:

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Light Sci Appl Year: 2024 Document type: Article Affiliation country: