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Superconductivity and Charge-Density-Wave-Like Transition in Th2Cu4As5.
Liu, Shaohua; Duan, Qingchen; Li, Baizhuo; Meng, Jiaojiao; Yang, Wuzhang; Liu, Yi; Lin, Yi-Qiang; Wu, Si-Qi; Lu, Jiayi; Bao, Jin-Ke; Xiao, Yusen; Zhao, Xinyu; Mei, Yu-Xue; Sun, Yuping; Tan, Shugang; Jing, Qiang; Yu, Dan; Zhong, Ruidan; Chen, Yongliang; Zhao, Yong; Ren, Zhi; Wang, Cao; Cao, Guang-Han.
Affiliation
  • Liu S; School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
  • Duan Q; School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
  • Li B; School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
  • Meng J; School of Physics, Interdisciplinary Center for Quantum Information, and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310058, P. R. China.
  • Yang W; School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
  • Liu Y; School of Science, Westlake University, Hangzhou 310064, P. R. China.
  • Lin YQ; School of Physics, Interdisciplinary Center for Quantum Information, and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310058, P. R. China.
  • Wu SQ; Department of Applied Physics, Key Laboratory of Quantum Precision Measurement of Zhejiang Province, Zhejiang University of Technology, Hangzhou 310023, P. R. China.
  • Lu J; School of Physics, Interdisciplinary Center for Quantum Information, and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310058, P. R. China.
  • Bao JK; School of Physics, Interdisciplinary Center for Quantum Information, and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310058, P. R. China.
  • Xiao Y; School of Physics, Interdisciplinary Center for Quantum Information, and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310058, P. R. China.
  • Zhao X; School of Physics and Hangzhou Key Laboratory of Quantum Matters, Hangzhou Normal University, Hangzhou 311121, P. R. China.
  • Mei YX; School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, P. R. China.
  • Sun Y; School of Physics, Interdisciplinary Center for Quantum Information, and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310058, P. R. China.
  • Tan S; School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
  • Jing Q; School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
  • Yu D; School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
  • Zhong R; School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
  • Chen Y; School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
  • Zhao Y; Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China.
  • Ren Z; School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, P. R. China.
  • Wang C; College of Physics and Energy, Fujian Normal University, Fuzhou 350117, P. R. China.
  • Cao GH; School of Science, Westlake University, Hangzhou 310064, P. R. China.
J Am Chem Soc ; 146(12): 8260-8268, 2024 Mar 27.
Article in En | MEDLINE | ID: mdl-38497725
ABSTRACT
We report the synthesis, crystal structure, and physical properties of a novel ternary compound, Th2Cu4As5. The material crystallizes in a tetragonal structure with lattice parameters a = 4.0639(3) Å and c = 24.8221(17) Å. Its structure can be described as an alternating stacking of fluorite-type Th2As2 layers with antifluorite-type double-layered Cu4As3 slabs. The measurement of electrical resistivity, magnetic susceptibility, and specific heat reveals that Th2Cu4As5 undergoes bulk superconducting transition at 4.2 K. Additionally, all these physical quantities exhibit anomalies at 48 K, accompanied by a sign change in the Hall coefficient, suggesting a charge-density-wave-like (CDW) phase transition. Drawing from both experimental data and band calculations, we propose that the superconducting and CDW-like phase transitions are, respectively, associated with the Cu4As3 slabs and the As plane in the Th2As2 layers.
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: J Am Chem Soc Year: 2024 Document type: Article
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Add to My VHL
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: J Am Chem Soc Year: 2024 Document type: Article