Utilizing Domain Engineering to Achieve High-Polarization Relaxor Ferroelectrics for Low-Consumption Ceramic Capacitors.

ABSTRACT

This study focuses on incorporating NaNbO3 (NN) into the Ba0.85Ca0.15Zr0.9Ti0.1O3 (BCZT) lattice to form (1 - x)BCZT-xNN ceramics. Although antiferroelectricity was not observed, an observed domain-movement-diminishment behavior with increasing NN dopant induced the formation of high polarization walls (HPWs) between adjacent C-phases. The 0.90BCZT-0.10NN composition exhibited superior polarization compared to most BCZT-based ferroelectrics, as validated by mathematical derivation. Integration of these findings revealed a Wrec of 3.86 J/cm3 at 360 kV/cm, with a high Wrec/Eb ratio defining energy consumption efficiency in dielectric capacitors. This work introduces a novel approach to fabricating low-consumption dielectric capacitors. Additionally, a significantly high Wrec of 5.36 J/cm3 was achieved with an NN dopant concentration of 0.30.