Fractional stoichiometry of the GaAs(001)c(4 x 4) surface: An in-situ x-ray scattering study.
Phys Rev Lett
; 62(5): 563-566, 1989 Jan 30.
Article
in En
| MEDLINE
| ID: mdl-10040267
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Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Phys Rev Lett
Year:
1989
Document type:
Article
Country of publication:
Estados Unidos