Low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers.
Phys Rev Lett
; 88(19): 196404, 2002 May 13.
Article
in En
| MEDLINE
| ID: mdl-12005654
ABSTRACT
We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities n approximately (1-50)x10(11) cm(-2), which includes the vicinity of the apparent metal-insulator transition in two dimensions (2D MIT). Using a novel technique of measuring the SdH oscillations in superimposed and independently controlled parallel and perpendicular magnetic fields, we determined the spin susceptibility chi(*), the effective mass m(*), and the g(*) factor for mobile electrons. These quantities increase gradually with decreasing density; near the 2D MIT, we observed enhancement of chi(*) by a factor of approximately 4.7.
Search on Google
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Phys Rev Lett
Year:
2002
Document type:
Article
Affiliation country:
Estados Unidos