Hydrogen-induced instability of the Ge(105) surface.
Phys Rev Lett
; 94(8): 086105, 2005 Mar 04.
Article
in En
| MEDLINE
| ID: mdl-15783909
ABSTRACT
The structure and stability of the hydrogen-terminated (105) surface of Ge deposited on Si(105) substrates are investigated by scanning tunneling microscopy (STM). Investigations combining STM, electron energy loss spectroscopy, and theory reveal that Si incorporation into the surface Ge layer of hydrogen-terminated Ge/Si(105) drastically destabilizes the surface. The STM images obtained on this surface are well explained by the recently established rebonded-step structure model.
Search on Google
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Phys Rev Lett
Year:
2005
Document type:
Article
Affiliation country:
Japón