Nonvolatile gate effect in a ferroelectric-semiconductor quantum well.
Phys Rev Lett
; 97(24): 247601, 2006 Dec 15.
Article
in En
| MEDLINE
| ID: mdl-17280323
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Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Phys Rev Lett
Year:
2006
Document type:
Article
Affiliation country:
Suiza
Country of publication:
Estados Unidos