Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840 GHz gain-bandwidth-product.
Opt Express
; 17(15): 12641-9, 2009 Jul 20.
Article
in En
| MEDLINE
| ID: mdl-19654668
ABSTRACT
In this work we report a separate-absorption-charge-multiplication Ge/Si avalanche photodiode with an enhanced gain-bandwidth-product of 845 GHz at a wavelength of 1310 nm. The corresponding gain value is 65 and the electrical bandwidth is 13 GHz at an optical input power of -30 dBm. The unconventional high gain-bandwidth-product is investigated using device physical simulation and optical pulse response measurement. The analysis of the electric field distribution, electron and hole concentration and drift velocities in the device shows that the enhanced gain-bandwidth-product at high bias voltages is due to a decrease of the transit time and avalanche build-up time limitation at high fields.
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Collection:
01-internacional
Database:
MEDLINE
Main subject:
Silicon
/
Optics and Photonics
/
Germanium
Type of study:
Risk_factors_studies
Language:
En
Journal:
Opt Express
Journal subject:
OFTALMOLOGIA
Year:
2009
Document type:
Article
Affiliation country:
Estados Unidos